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Número de pieza | IRFP32N50K | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 94099A
Applications
SMPS MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
500V
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low RDS(on)
IRFP32N50K
HEXFET® Power MOSFET
RDS(on)typ.
0.135Ω
ID
32A
TO-247AC
Absolute Maximum Ratings
www.DataSheet4U.comID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Max.
32
Units
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
IDM Pulsed Drain Current
130
PD @TC = 25°C Power Dissipation
460 W
Linear Derating Factor
3.7 W/°C
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
± 30 V
13 V/ns
TJ Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °C
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
10lb*in (1.1N*m)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
450
32
46
Max.
0.26
–––
40
Units
mJ
A
mJ
Units
°C/W
1
05/24/01
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IRFP32N50K
35 RD
VDS
30 VGS D.U.T.
25 RG +-VDD
20 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5 90%
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
www.DataSheet4U.comCase Temperature
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFP32N50K.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP32N50K | Power MOSFET ( Transistor ) | International Rectifier |
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