DataSheet.es    


PDF IRFP360LC Data sheet ( Hoja de datos )

Número de pieza IRFP360LC
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRFP360LC (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRFP360LC Hoja de datos, Descripción, Manual

www.DataSheet4U.com
Previous Datasheet
Index
Next Data Sheet
HEXFET® Power MOSFET
PD - 9.1230
IRFP360LC
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
VDSS = 400V
RDS(on) = 0.20
ID = 23A
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
www.DataSheet4U.combut superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
23
14
92
280
2.2
±30
1200
23
28
4.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
––––
Units
°C/W
40
DataSheet 4 U .com
To Order
Revision 0
www.DataSheet4U.com

1 page




IRFP360LC pdf
www.DataSheet4U.com
Previous Datasheet
Index
Next Data Sheet
IRFP360LC
VDS
RD
25 VGS D.U.T.
RG
VDD
20
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
5
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
wCawse Tewmpe.raDtureataSheet4U.com
1
D = 0.50
0.1
0.01
0 .2 0
0 .1 0
0.05
0 .0 2
0 .0 1
SING LE PULSE
(THERM AL RESPO NSE)
0.001
0.00001
0.0001
PD M
N o tes:
1. D uty fa ctor D = t 1 / t 2
t1
t2
2. P e ak TJ = P D M x Z th JC + T C
0 .001
0.01
0.1
1
t1 , R ectang ular Pulse D ura tion (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
DataSheet 4 U .com
To Order
www.DataSheet4U.com

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRFP360LC.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFP360LCPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRFP360LCTrans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247ACNew Jersey Semiconductor
New Jersey Semiconductor
IRFP360LCPBFHEXFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar