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PDF IRFP3703 Data sheet ( Hoja de datos )

Número de pieza IRFP3703
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFP3703 Hoja de datos, Descripción, Manual

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SMPS MOSFET
PD - 93917A
IRFP3703
Applications
l Synchronous Rectification
l Active ORing
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max ID
0.0028
210A†
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
www.DataSheet4U.comParameter
Max.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
210 †
100 †
1000
230
PD @TA = 25°C Power Dissipation
3.8
Linear Derating Factor
1.5
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
± 20
5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typical SMPS Topologies
Typ.
–––
0.24
–––
Max.
0.65
–––
40
Units
°C/W
l Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
l Offline High Power AC/DC Convertors using Synchronous Rectification
Notes  through † are on page 8
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5/18/01
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IRFP3703 pdf
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IRFP3703
250
LIMITED BY PACKAGE
200
150
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
50 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
www.DataSheet4U.comCase Temperature
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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