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PDF IRFP3710 Data sheet ( Hoja de datos )
| Número de pieza | IRFP3710 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD-91490C
IRFP3710
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
G
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.025W
ID = 57A
S
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
www.DataSheet4U.comsimilar but superior to the earlier TO-218 package
TO-247AC
because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RqJC
RqCS
RqJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
57
40
180
200
1.3
± 20
530
28
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.75
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
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IRFP3710
60 RD
VDS
50 VGS D.U.T.
40 RG +-VDD
10V
30 Pulse Width £1 µs
Duty Factor £ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
VDS
90%
10%
Fig 9. Maximum Drain Current Vs.
www.DataSheet4U.comCase Temperature
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP3710.PDF ] | |
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