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PDF FPD5W1KX Data sheet ( Hoja de datos )
| Número de pieza | FPD5W1KX | |
| Descripción | Avalanche Photodiode | |
| Fabricantes | Eudyna Devices | |
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Avalanche Photodiode
FPD5W1KX
FEATURES
• Data rates up to 2.5Gb/s
• Operating temperature: -40°c to 85°C
• Photosensitive diameter: 30µm
• High cut-off frequency: 3.0GHz at M=5 and 10
• Large gain-bandwidth product: 40GHz
• Low dark current: 20nA
• Low multipled dark current: 3nA
• Low excess noise factor: 5 at M=10
APPLICATIONS
• 2.4 Gb/s optical transmission systems
DESCRIPTION
The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD)
optimized for operation at 1550nm. This APD is designed for use in optical transmission
systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances.
The APD chip has a photosensitive area diameter of 30µm. Fujitsu’s advanced InP
material technology realizes a high reliability planar structure device with wide bandwidth
(large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is
aligned to a hermetically sealed APD through a highly stable optical coupling system.
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ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Min.
Max.
Unit
Storage Temperature
Tstg -40 +85 °C
Operating Temperature
Top
-40 +85
°C
APD Reverse Current
IR 0 3(peak) mA
APD Forward Current
IF - 10 mA
APD Reverse Voltage
VR -
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
VB
V
Edition 1.1
July 2004
1
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1 page  
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Avalanche Photodiode
FPD5W1KX
Fig. 9 Temperature Coefficient
vs. Breakdown Voltage
0.3
γ (%/°C)
0.2
Γ (V/°C)
0.1
0
40 45 50 55
Breakdown Voltage, VB (V)
60
Fig. 10 Excess Noise Factor
vs. Multiplication Factor
50
Ta = 25°C,
λ = 1,550nm,
20
Ipo = 2µA,
f = 30 MHz,
B = 1 MHz
10
5
2
05
10
50 100
Multiplication Factor, M
Fig. 11 Capacitance vs. Reverse Voltage
5
Ta = 25°C
f = 1MHz
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1
0.5
0.1
1
5 10
50 100
Reverse Voltage, VR (V)
5
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| PDF Descargar | [ Datasheet FPD5W1KX.PDF ] | |
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