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PDF P3NC60FP Datasheet ( Hoja de datos )

Número de pieza P3NC60FP
Descripción STP3NC60FP
Fabricantes S TMICROELECTRONICS 
Logotipo S TMICROELECTRONICS Logotipo

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P3NC60FP Hoja de datos, Descripción, Manual
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STP3NC60
STP3NC60FP
N-CHANNEL 600V - 3.3- 3A TO-220/TO-220FP
PowerMeshII MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC60
600 V
<3.6
3A
STP3NC60FP
600V
<3.6
2A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
www.DataSheet4U.coms HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
May 2000
Value
STP3NC60 STP3NC60FP
600
600
±30
33
1.9 1.9(*)
12 12(*)
80 40
0.64 0.32
3.5
- 2000
–60 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 3A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
1/9
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P3NC60FP pdf
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Gate Charge vs Gate-source Voltage
Capacitance Variations
STP3NC60/FP
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
5/9
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