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PDF 2SC2585 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2585 | |
| Descripción | NPN SILICON RF TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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2SC2585
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The 2SC2585 is a Common Emitter
Device Designed for Low Niose
Amplifier and Medium Power Oscillator
Applications up to 8.5 GHz.
MAXIMUM RATINGS
IC 65 mA
VCEO
12 V
VCBO
25 V
VEB
PT
TJ
TSTG
θJC
1.5 V
400 mW @ TC = 166 OC
-65 OC to +200 OC
-65 OC to +200 OC
85 OC/W
PACKAGE STYLE
DIMENSIONS IN MILLIMETERS
1 = BASE 3 = COLLECTOR
2 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
ICBO
VCB = 8.0 V
IEBO
VEB = 1.0 V
hFE
VCE = 8.0 V
IC = 7.0 mA
ft
VCE = 8.0 V
IC = 20 mA
Ccb VCB = 10 V
f = 1.0 GHz
f = 1.0 MHz
2
|S21E|
VCE = 8.0 V
IC = 20 mA
GNF
MAG
NF
VCE = 8.0 V
VCE = 8.0 V
IC = 7.0 mA
IC = 10 mA
VCE = 8.0 V IC = 7.0 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
100
100
50 115 250
UNITS
µA
µA
---
8.5 GHz
0.2 0.6 pF
18.0
10.0 11.0
6.5
11.0
15.0
10.0
2.0 2.5
dB
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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