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PDF FSAM75SM60A Data sheet ( Hoja de datos )
| Número de pieza | FSAM75SM60A | |
| Descripción | SPMTM (Smart Power Module) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
May 4, 2006
FSAM75SM60A
SPMTM (Smart Power Module)
General Description
FSAM75SM60A is an advanced smart power module
(SPM) that Fairchild has newly developed and designed to
provide very compact and low cost, yet high performance
ac motor drives mainly targeting medium speed low-power
inverter-driven application like air conditioners. It combines
optimized circuit protection and drive matched to low-loss
IGBTs. Highly effective short-circuit current detection/
protection is realized through the use of advanced current
sensing IGBT chips that allow continuous monitoring of the
IGBTs current. System reliability is further enhanced by the
built-in over-temperature and integrated under-voltage
lock-out protection. The high speed built-in HVIC provides
opto-coupler-less IGBT gate driving capability that further
reduce the overall size of the inverter system design. In
addition the incorporated HVIC facilitates the use of single-
supply drive topology enabling the FSAM75SM60A to be
driven by only one drive supply voltage without negative
bias. Inverter current sensing application can be achieved
due to the devided nagative dc terminals.
Features
• UL Certified No. E209204
• 600V-75A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection
• Divided negative dc-link terminals for inverter current
sensing applications
• Single-grounded power supply due to built-in HVIC
• Typical switching frequency of 5kHz
• Built-in thermistor for over-temperature monitoring
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using DBC (Direct
Bonded Copper) substrate
• Adjustable current protection level by varying series
resistor value with sense-IGBTs
Applications
• AC 100V ~ 253V three-phase inverter drive for small
power ac motor drives
• Home appliances applications like air conditioners drive
system
External View
Top View
60mm
31mm
Bottom View
©2006 Fairchild Semiconductor Corporation
Fig. 1.
May 4, 2006
1 page  
www.DataSheet4U.com
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Item
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Symbol
VDC
VPN(Surge)
VCES
± IC
± IC
± ICP
PC
TJ
Condition
Applied to DC - Link
Applied between P- N
TC = 25°C
TC = 100°C
TC = 25°C , Under 1ms pulse width
TC = 25°C per One Chip
(Note 1)
Rating
450
500
600
75
37
110
189
-20 ~ 125
Unit
V
V
V
A
A
A
W
°C
Note
1. It would be recommended that the average junction temperature should be limited to TJ ≤ 125°C (@TC ≤ 100°C) in order to guarantee safe operation.
Control Part
Item
Symbol
Condition
Control Supply Voltage
VCC
Applied between VCC(UH), VCC(VH), VCC(WH) -
COM(H), VCC(L) - COM(L)
High-side Control Bias Voltage VBS Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -
VS(W)
Input Signal Voltage
VIN Applied between IN(UH), IN(VH), IN(WH) - COM(H)
IN(UL), IN(VL), IN(WL) - COM(L)
Fault Output Supply Voltage
VFO Applied between VFO - COM(L)
Fault Output Current
IFO Sink Current at VFO Pin
Current Sensing Input Voltage VSC Applied between CSC - COM(L)
Rating
20
Unit
V
20 V
-0.3 ~ VCC+0.3 V
-0.3 ~ VCC+0.3
5
-0.3 ~ VCC+0.3
V
mA
V
Total System
Item
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Symbol
Condition
VPN(PROT) Applied to DC - Link,
VCC = VBS = 13.5 ~ 16.5V
TJ = 125°C, Non-repetitive, less than 5µs
TC Note Fig. 2
TSTG
VISO 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate
Rating
400
-20 ~ 100
-20 ~ 125
2500
Unit
V
°C
°C
Vrms
©2006 Fairchild Semiconductor Corporation
May 4, 2006
5 Page 
www.DataSheet4U.com
Time Charts of SPMs Protective Function
Input Signal
Internal IGBT
Gate-Emitter Voltage
Control Supply Voltage
Output Current
Fault Output Signal
P3
UV
detect
P1
P2
P4
UV
P5 reset
P6
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 9. Under-Voltage Protection (Low-side)
Input Signal
Internal IGBT
Gate-Emitter Voltage
Control Supply Voltage
VBS
Output Current
Fault Output Signal
P3
UV
detect
P1
P2
UV
P5 reset
P6
P4
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detection
P3 : IGBT gate interrupt
P4 : No fault signal
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 10. Under-Voltage Protection (High-side)
©2006 Fairchild Semiconductor Corporation
May 4, 2006
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet FSAM75SM60A.PDF ] | |
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