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PDF S9013LT1 Data sheet ( Hoja de datos )
| Número de pieza | S9013LT1 | |
| Descripción | Plastic Encapsulate Transistors | |
| Fabricantes | Jiangsu Changjiang Electronics Technology | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S9013LT1 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM : 0.3
W Tamb=25
Collector current
ICM : 0.5
A
Collector-base voltage
V(BR)CBO : 40
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
otherwise specified
unless
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= 100 A IE=0
Ic= 0.1mA IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=100 A IC=0
Collector cut-off current
ICBO VCB=40 V , IE=0
Collector cut-off current
ICEO VCE=20V , IB=0
Emitter cut-off current
IEBO VEB= 5V , IC=0
DC current gain
HFE(1)
HFE(2)
VCE=1V, IC= 50m A
VCE=1V, IC=500mA
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50m A
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
VBE(sat)
fT
IC=500 mA, IB= 50m A
VCE=6V, IC= 20mA
f=30MHz
MIN
40
25
5
120
40
150
Unit : mm
TYP MAX UNIT
V
V
V
0.1 A
0.1 A
0.1 A
350
0.6 V
1.2 V
MHz
DwEVwICwE.MDAaRKtaINSGh: Se9e01t43LUT1.c=Jo3m
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet S9013LT1.PDF ] | |
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