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PDF STQ2NF06L Data sheet ( Hoja de datos )
| Número de pieza | STQ2NF06L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STQ2NF06L
N-CHANNEL 60V - 0.1 Ω - 2A TO-92
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STQ2NF06L
60 V
<0.12 Ω
2A
s TYPICAL RDS(on) = 0.1 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
TO-92
TO-92
(Ammopack)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot(1) Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
www.DaTtj aSheMeatx4. UOp.ecroatming Junction Temperature
(•) Pulse width limited by safe operating area.
(1) Related to Rthj -l
October 2003
.
Value
Unit
60 V
60 V
± 16 V
2A
1.2 A
8A
3W
8 W/°C
6 V/ns
200 mJ
-55 to 150
°C
°C
(2) ISD ≤2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(3) Starting Tj = 25 oC, ID = 2A, VDD = 30V
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STQ2NF06L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STQ2NF06L.PDF ] | |
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