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PDF STQ-2016-3Z Data sheet ( Hoja de datos )

Número de pieza STQ-2016-3Z
Descripción 700-2500 MHz Direct Quadrature Modulator
Fabricantes ETC　
Logotipo ETC Logotipo



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Product Description
The Sirenza Microdevices STQ-2016-3 is a direct quadrature
modulator targeted for use in W-CDMA applications. This
device features a 700-2500 MHz operating frequency band,
excellent carrier and sideband suppression, and a low broad-
band noise floor.
STQ-2016-3
STQ-2016-3Z Pb RoHS Compliant
& Green Package
700-2500 MHz Direct Quadrature Modulator
The STQ-2016-3 uses silicon germanium (SiGe) device
technology and delivers a typical channel power of -11 dBm
with adjacent channel power less than -65 dBc. A digital
input shut-down feature is included that, when enabled,
attenuates the output by 60 dB. The device is packaged in an
industry standard 16 pin TSSOP with exposed paddle for
superb RF and thermal ground. The STQ-2016-3Z is pack-
aged in a RoHs compliant and Green 16-pin TSSOP with
matte tin finish.
Functional Block Diagram
BBQP 1
16 BBQN
VCC 2
15 VCC
VEE 3
14 VEE
LOP 4
LON 5
LO
QUADRATURE
GENERATOR
13 RFP
12 RFN
VEE 6
11 VEE
16 pin TSSOP with Exposed Ground Pad
Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm)
Package Height: 0.039 inches (1.0 mm)
Product Features
• Excellent carrier feedthrough, -40 dBm constant
with output power
• +4.0 dBm output P1dB
• Wide baseband input, DC - 500 MHz
• Superb phase accuracy and amplitude balance,
±0.5 deg./±0.2 dB
• Very low noise floor, -157 dBm/Hz
• Low ACP, -65 dBc
SD 7
BBIP 8
10 VCC
9 BBIN
Applications
• W-CDMA Transmitters
Product Specifications – W-CDMA Modulation (See Table 1 for Test Conditions)
869-894 MHz
1930-1990 MHz
Parameters
Comments
Unit Min. Typ. Max. Min. Typ. Max.
Channel Power
Guaranteed through
Output Power test as
specified on Page 2
dBm
-13 -11
-9 -14.5 -12.5 -10.5
Power Flatness
Range across fre-
quency band
dB
0.25 0.5
0.25 0.5
Adjacent Channel Power
Guaranteed through
IM3 test as specified
on Page 2
dBc
-65 -63
-65 -63
First Alternate Channel
Power
dBc
-75 -68
-73 -68
Second Alternate Channel
Power
dBc
-75 -68
-73 -68
Broadband Noise Floor
60 MHz offset from
carrier
dBm/Hz
-157 -156
-157 -156
Signal-to-Noise Ratio
Noise Offset: 60 MHz,
Measured in a 3.84 MHz
bandwidth
dB
79 81
77 79
2110-2170 MHz
Min. Typ. Max. Type*
-15 -13 -11
E
0.25 0.5 C,D
-65 -63 E
-73 -68 C,D
-73 -68 C,D
-156 -155 C,D
76 78
C,D
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature
and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice.
No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in
life-support devices and/or systems.
www.DataSheet4U.comCopyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-104229 Rev B

1 page




STQ-2016-3Z pdf
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Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH,
STQ-2016-3 Direct Quadrature Modulator
Peak-to-Average Ratio = 10.54
Broadband Noise Floor
115500 15 0
115522 15 2
115544
115566
115588 66
44
22
00
22
4 46
II//IQQ/QDDrrDiivvreeiv==e12 =VVpp1pp,,VLDDOpiiLffDpffO..,rivDDeiLrfifev.veelL(deBveml) (d Bm)
I/IQ/QDrDivreiv=e3 =Vp2p,VDpifpf., Diff.
I/IQ/QDrDivreiv=e4 =Vp3p,VDpifpf., Diff.
I/Q Drive = 4 V pp, Diff.
68
8
Figure 1. Broadband Noise Floor (60 MHz Offset) Vs. LO
Drive Level, LO Frequency = 2140 MHz.
15 4
15 6
15 8
1
1.5 2 2.5 3
IQ Drive Level (V pp, Diff.)
LO D rive = -5 dBm
LO D rive = -2 dBm
LO D rive = -1 dBm
LO D rive = +4 dB m
LO D rive = +7 dB m
3.5
Figure 2. Broadband Noise Floor (60 MHz Offset) Vs. I/Q
Drive Level, LO Frequency = 2140 MHz.
4
156 156
1 56 .5
1 56 . 5
157 157
1 57 .5
1 57 . 5
1 58
4 .7
4.8 4.9
5
Vcc (Vdc)
I/Q Drive = 1.5 Vpp, Diff.
I/Q Drive = 1.7 Vpp, Diff.
I/Q Drive = 1.9 Vpp, Diff.
5 .1
5 .2
Figure 3. Broadband Noise Floor (60 MHz Offset) Vs.
Vcc, LO Drive = +4.0 dBm @ 2140 MHz.
1 56
1 58
1 .4
1.5 1.6 1.7 1.8
IQ Drive Level (Vpp, Diff.)
Vcc = 4.75 V
Vcc = 5.00 V
Vcc = 5.25 V
1 .9
Figure 4. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive
Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.
1 56
1 56 . 5
1 56 .5
157 157
1 57 . 5
1 57 .5
1 58
50
0 50
Temperature (Deg. C)
I/Q Drive = 1.5 Vpp, Diff.
I/Q Drive = 1.7 Vpp, Diff.
I/Q Drive = 1.9 Vpp, Diff.
1 58
100 1.4 1.5 1.6 1.7 1.8 1.9
IQ Drive Level (Vpp, Diff.)
Temp = -40 Deg. C
Temp = +25 Deg. C
Temp = +85 Deg. C
Figure 5. Broadband Noise Floor (60 MHz Offset) Vs.
Temperature, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 6. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive
Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz.
www.D303aSt.aTeSchhnoeloegytC4oUurt,.Bcrooommfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104229 Rev B

5 Page





STQ-2016-3Z arduino
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Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH,
STQ-2016-3 Direct Quadrature Modulator
Peak-to-Average Ratio = 10.54
Second Alternate Channel Power
60 60
65 65
70 70
75
80
85
6
4 20 2
LO Drive Level (d Bm)
I/Q Drive = 1 V pp, Diff.
I/Q Drive = 2 V pp, Diff.
I/Q Drive = 3 V pp, Diff.
I/Q Drive = 4 V pp, Diff.
4
6
Figure 37. Second Alternate Channel Power Vs.
LO Drive Level, LO Frequency = 2140 MHz.
8
75
80
85
1
1.5 2 2.5 3
IQ Drive Level (Vpp, D iff.)
LO D rive = -5 dBm
LO D rive = -2 dBm
LO D rive = -1 dBm
LO D rive = +4 dBm
LO D rive = +7 dBm
3.5
Figure 38. Second Alternate Channel Power Vs. I/Q Drive
Level, LO Frequency = 2140 MHz.
4
60
65
70
75
80
85
21 00
21 20
21 40
LO Frequency (MHz)
I/Q Drive = 1 V pp, Diff.
I/Q Drive = 2 V pp, Diff.
I/Q Drive = 3 V pp, Diff.
I/Q Drive = 4 V pp, Diff.
21 60
21 80
Figure 39. Second Alternate Channel Power Vs. LO
Frequency, LO Drive = +4.0 dBm.
60
65
70
75
80
85
1
1.5 2 2.5 3
IQ Drive Level (Vpp, Diff.)
LO Freq. = 2110 MHz
LO Freq. = 2140 MHz
LO Freq. = 2170 MHz
3 .5
Figure 40. Second Alternate Channel Power Vs. I/Q Drive
Level, LO Drive = +4.0 dBm.
4
70 70
72 72
74 74
76 76
78 78
80
4 .7
4.8 4.9
5
Vcc (Vdc)
I/Q Drive = 1.5 Vpp, Diff.
I/Q Drive = 1.7 Vpp, Diff.
I/Q Drive = 1.9 Vpp, Diff.
5 .1
5 .2
80
1 .4
1.5 1.6 1.7 1.8
IQ Drive Level (Vpp, Diff.)
Vcc = 4.75 V
Vcc = 5.00 V
Vcc = 5.25 V
1 .9
Figure 41. Second Alternate Channel Power Vs. Vcc, LO Drive =
+4.0 dBm @ 2140 MHz.
Figure 42. Second Alternate Channel Power Vs. I/Q Drive Level,
over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.
www.D303aSt.aTeSchhnoeloegytC4oUurt,.Bcrooommfield, CO 80021
Phone: (800) SMI-MMIC
11
http://www.sirenza.com
EDS-104229 Rev B

11 Page







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