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PDF FDMS2572 Data sheet ( Hoja de datos )
| Número de pieza | FDMS2572 | |
| Descripción | N-Channel UltraFET Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FDMS2572 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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www.DataSheet4U.com
February 2006
FDMS2572
N-Channel UltraFET Trench® MOSFET
150V, 4.5A, 47mΩ
General Description
UltraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for low rDS(on), low ESR, low total and Miller
gate charge, these devices are ideal for high frequency
DC to DC converters.
Applications
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Features
Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A
Typ Qg = 31nC at VGS = 10 V
Low Miller Charge
Optimized efficiency at high frequencies
PIN 1
SSSG
D
MLP 5X6
DDDD
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current – Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDMS2572
FDMS2572
7’’
www.DataSheet4U.com©2006 Fairchild Semiconductor Corporation
FDMS2572 Rev C(W)
1234
8765
Ratings
150
±20
4.5
30
2.8
1.1
–55 to +150
44
115
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
3000 units
www.fairchildsemi.com
1 page  
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Dimensional Outline and Pad Lay-out
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FDMS2572 Rev C(W)
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMS2572.PDF ] | |
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