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PDF FLL300IP-4 Data sheet ( Hoja de datos )
| Número de pieza | FLL300IP-4 | |
| Descripción | L-band Medium & High Power GAAS Fets | |
| Fabricantes | Fujitsu Microelectronics | |
| Logotipo |  |
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FLL300IP-4www.DataSheet4U.com
FEATURES
• Push-Pull Configuration
• High PAE: 40% (Typ.)
• Broad Frequency Range: 3400 to 3600 MHz.
• Suitable for class A operation.
DESCRIPTION
The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it
offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• WLL Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
VDS
VGS
PT
Tstg
Tc = 25°C
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
107
-65 to +175
+175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Drain Current
IDSS
VDS = 5V, VGS=0V
- 12 16
Transconductance
gm VDS = 5V, IDS=7.2A
- 6000 -
Unit
A
mS
Pinch-Off Voltage
Vp VDS = 5V, IDS=720mA -1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage VGSO IGS = -720µA
-5 -
-
V
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
P1dB
G1dB
IDSR
ηadd
VDS = 10V
f=3.6GHz
IDS = 6A
Note 1
Thermal Resistance
Rth Channel to Case
Channel Temperature Rise
∆Tch
Note 2
CwAwSwE .SDTaYLtaES: IhPeet4U.com
Note 1: The device shall be measured at a constant VGS condition.
Note 2: ∆Tch = (10V x IDSR - Pout + Pin) x Rth
43.5
7.0
-
-
-
-
44.5 -
dBm
8.0 -
dB
6.0 8.0
A
40 -
%
1.0 1.4
- 80
°C/W
°C
G.C.P.: Gain Compression Point
Edition 1.4
December 1999
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLL300IP-4.PDF ] | |
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