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PDF 25FV051T Data sheet ( Hoja de datos )
| Número de pieza | 25FV051T | |
| Descripción | LE25FV051T | |
| Fabricantes | Sanyo Electric | |
| Logotipo |  |
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Preliminary Specifications
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CMOS LSI
LE25FV051T
512k (64k words × 8bits) Serial Flash EEPROM
Features
CMOS Flash EEPROM Technology
Single 3.3-Volt Read and Write Operations
Sector Erase Capability: 256 Bytes per sector
Operating Frequency: 10MHz
Low Power Consumption
Active Current (Read): 10 mA (Max.)
Standby Current: 20 µA (Max.)
Serial Peripheral Interface (S.P.I.) mode 0,3
High Read/Write Reliability
Sector-write Endurance Cycles: 104
10 Years Data Retention
Self-timed Erase and Programming
Byte Programming: 35 µs (Max.)
End of Write Detection: Status Register Read
Hardware Data Protection
Packages Available: MSOP8(225mil)
Product Description
The LE25FV051T is a 64K x 8 CMOS sector
erase, byte programmable serial Flash EEPROM.
The LE25FV051T is manufactured using SANYO's
proprietary, high performance CMOS Flash
EEPROM technology. Breakthroughs in EEPROM
cell design and process architecture attain better
reliability and manufacturability compared with
conventional approaches. The LE25FV051T erases
and programs with a 3.3-volt only power supply.
LE25FV051T conforms to Serial Peripheral
Interface (S.P.I.).
Featuring high performance programming, the
LE25FV051T typically byte programs in 35 µs. The
LE25FV051T typically sector (256 bytes) erases in
4ms. Both program and erase times can be
optimized using interface feature such as Status
Register to indicate the completion of the write cycle.
To protect against an inadvertent write, the
LE25FV051T has on chip hardware data protection
scheme. Designed, manufactured, and tested for a
wide spectrum of applications, the LE25FV051T is
offered with a guaranteed sector write endurance of
104 cycles. Data retention is rated greater than 10
years.
The LE25FV051T is best suited for applications
that require re-programmable nonvolatile mass
storage of program or data memory.
Device Operation
Commands are used to initiate the memory
operation functions of the device. Commands are
written to the command register through serial input
(SI). The addresses and data of Commands are
latched to be used to operate functions such as
Read, Sector_Erase, Byte_Program and so on.
Fig.3 and Fig.4 contain the timing waveforms of
serial input and output. By setting CS to LOW, the
device is selected. And commands, addresses, and
dummy bits can be let in serially through SI port.
When the device is in Read or Status Register Read
mode, SO pin is in Low-impedance state. And the
requested data can be read out from MSB (most
significant bit) synchronously with the falling edge of
SCK.
WP
Vcc
CS
SCK
1
2
3
4
8 RESET
7 Vss
6 SO
5 SI
Figure1: Pin Assignment for 8-pin MSOP
*This product incorporate technology licensed from Silicon Storage Technology, Inc.
This preliminary specification is subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
1-1, 1 Chome, Sakata, Oizumi-machi, Ora-gun, GUNMA, 370-0596 JAPAN
Revision 2.0-January 26,2000-KI/ki-1/10
1 page  
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Preliminary Specifications
LE25FV051T
3.3V-only 512k-Bit Serial Flash EEPROM
AC Characteristics
Symbol
Parameter
fCLK
tCSS
tCSH
tCPH
tCHZ
tDS
tDH
tCLH
tCLL
tCLZ
tV
tHO
tSE
tBP
tRST
Clock Frequency
CS setup time
CS hold time
CS standby pulse width
CS to Hi-Z output
Data Setup time
Data hold time
SCK High pulse width
SCK Low pulse width
SCK to Lo-Z output
SCK to output valid
Output data hold time
Sector Erase Cycle Time
Byte Program Cycle time
Write Reset Recovery Time
Limit
Min. Max.
10
400
400
250
250
30
30
45
45
0
40
0
4
35
4
unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
µs
µs
AC Test Conditions
Input Pulse Level .................................................0 V ~ 3.0 V
Input Rise/Fall Time ..............................................5 ns
Input/Output Timing Level ...................................1.5V
Input Load Levels..................................................30 pF
SANYO Electric Co., Ltd.
5/10
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 25FV051T.PDF ] | |
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