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PDF K7M161825M Data sheet ( Hoja de datos )

Número de pieza K7M161825M
Descripción (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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( DataSheet : www.DataSheet4U.com )
K7M163625M
K7M161825M
512Kx36 & 1Mx18 Flow-Through NtRAMTM
Document Title
512Kx36 & 1Mx18-Bit Flow Through NtRAMTM
Revision History
Rev. No.
History
0.0 1. Initial document.
0.1 1. Update ICC & ISB values.
0.2 1. Change tOE from 3.5ns to 4.0ns at -8 .
2. Change tOE from 3.5ns to 4.0ns at -9 .
3. Change tOE from 3.5ns to 4.0ns at -10 .
0.3 1. Change ISB value from 60mA to 80mA at -8.
2. Change ISB value from 50mA to 70mA at -9 .
3. Change ISB value from 40mA to 60mA at -10 .
0.4 1. Changed tCYC from 12ns to 10ns at -9 .
2. Changed DC condition at Icc and parameters
Icc ; from 300mA to 320mA at -8,
from 260mA to 300mA at -9,
from 240mA to 280mA at -10
3. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
1.0 1. Final Spec Release.
2.0 Add access time 7.5ns bin.
3.0 1. Remove -10 bin ( tCD=10ns)
Draft Date
March. 25. 1999
May. 27. 1999
June. 22. 1999
Remark
Preliminary
Preliminary
Preliminary
Sep. 04. 1999
Preliminary
Nov. 19. 1999
Preliminary
Dec. 08. 1999
Nov. 23. 2000
Feb. 23. 2001
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - February 2001
Rev 3.0
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1 page




K7M161825M pdf
K7M163625M
K7M161825M
512Kx36 & 1Mx18 Flow-Through NtRAMTM
119BGA PACKAGE PIN CONFIGURATIONS(TOP VIEW)
K7M163625M(512Kx36)
1 2 34 5 6
A VDDQ A A A A A
B NC CS2 A ADV A CS2
C NC A
A V DD A
A
D
DQc
DQPc
V SS
NC
VSS DQPb
E
DQc
DQc
V SS
C S1
VSS DQb
F
VDDQ
DQc
V SS
OE
VSS DQb
G
DQc
DQc
B Wc
A
BW b
DQb
H
DQc
DQc
V SS
WE
VSS DQb
J
VDDQ
V DD
NC
V DD
NC
V DD
K
DQd
DQd
V SS
CLK
VSS
DQa
L
DQd
DQd
BWd
NC
BW a
DQa
M
VDDQ
DQd
V SS
CKE
VSS
DQa
N
DQd
DQd
V SS
A1*
VSS DQa
P
DQd
DQPd
V SS
A0*
VSS DQPa
R
NC
A
LBO
V DD
NC
A
T NC NC A A A NC
U
VDDQ
NC
NC
NC
NC
NC
Note : * A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
7
VDDQ
NC
NC
DQb
DQb
VDDQ
DQb
DQb
VDDQ
DQa
DQa
VDDQ
DQa
DQa
NC
ZZ
VDDQ
PIN NAME
SYMBOL
A
A0,A1
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx
(x=a,b,c,d)
OE
ZZ
LBO
PIN NAME
Address Inputs
Burst Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
SYMBOL
VDD
VSS
N.C.
DQa
DQb
DQc
DQd
DQPa~Pd
VDDQ
PIN NAME
Power Supply
Ground
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Output Power Supply
- 5 - February 2001
Rev 3.0

5 Page





K7M161825M arduino
K7M163625M
K7M161825M
512Kx36 & 1Mx18 Flow-Through NtRAMTM
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX UNIT NOTES
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
IIL V DD=Max ; VIN=V SS to VDD
IOL Output Disabled,
Device Selected, IOUT =0mA,
ICC ZZ VIL , Cycle Time tCYC Min
-2 +2 µA
-2 +2 µA
-75 -
340
-85 -
320 mA 1,2
-90 -
300
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
ISB
ISB1
ISB2
VOL
V OH
Device deselected, IOUT =0mA,
ZZ VIL, f=Max,
All Inputs 0.2V or V DD -0.2V
-75
-85
-90
Device deselected, IOUT =0mA, ZZ0.2V, f=0,
All Inputs=fixed (V DD-0.2V or 0.2V)
Device deselected, IOUT =0mA, ZZVDD -0.2V,
f=Max, All Inputs VIL or V IH
IOL=8.0mA
IOH=-4.0mA
-
-
-
-
-
-
2.4
90
80 mA
70
30 mA
30 mA
0.4 V
-V
Output Low Voltage(2.5V I/O)
VOL IOL=1.0mA
- 0.4 V
Output High Voltage(2.5V I/O)
VOH IOH=-1.0mA
2.0 - V
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
VIL
VIH
VIL
VIH
-0.3*
2.0
-0.3*
1.7
0.8
VDD +0.5**
0.7
VDD +0.5**
V
V
V
V
3
3
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=V DDQ+0.3V.
VIH
VS S
VS S - 1.0V
20% tCYC(MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
- 11 -
February 2001
Rev 3.0

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