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PDF K4F661612E Data sheet ( Hoja de datos )
| Número de pieza | K4F661612E | |
| Descripción | (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM with Fast Page Mode | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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( DataSheet : www.DataSheet4U.com )
Industrial Temperature
K4F661612E, K4F641612E
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4F661612E-TI/P(3.3V, 8K Ref.)
- K4F641612E-TI/P(3.3V, 4K Ref.)
• Active Power Dissipation
Speed
-45
-50
-60
8K
324
288
252
Unit : mW
4K
468
432
396
• Refresh Cycles
Part
NO.
K4F661612E*
K4F641612E
Refresh
cycle
8K
4K
Refresh time
Normal L-ver
64ms 128ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS -before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
• Performance Range
Speed
-45
tRAC
45ns
tCAC
12ns
-50 50ns 13ns
-60 60ns 15ns
tRC
80ns
90ns
110ns
tPC
31ns
35ns
40ns
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V ±0.3V power supply
• Industrial Temperature operating ( -40~85°C )
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
D Q8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
www.DataSheet4U.com
1 page  
Industrial Temperature
K4F661612E, K4F641612E
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS, UCAS, LCAS, W, OE]
Output capacitance [DQ0 - DQ15]
Symbol
CI N 1
CI N 2
C DQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (-40°C≤TA≤85°C, See note 2)
Test condition : VC C=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Symbol
tR C
tR W C
tR A C
tC A C
tA A
tCLZ
tO F F
tT
tR P
tR A S
tR S H
tC S H
tC A S
tRCD
tR A D
tC R P
tASR
tR A H
tASC
tC A H
tR A L
tR C S
tRCH
tRRH
tW C H
tW P
tR W L
tC W L
tD S
tD H
-45
Min Max
80
115
45
12
23
0
0 13
1 50
25
45 10K
12
45
12 10K
18 33
13 22
5
0
8
0
8
23
0
0
0
8
8
13
12
0
10
-50
Min Max
90
133
50
13
25
0
0 13
1 50
30
50 10K
13
50
13 10K
20 37
15 25
5
0
10
0
10
25
0
0
0
10
10
15
13
0
10
-60
Min Max
110
153
60
15
30
0
0 13
1 50
40
60 10K
15
60
15 10K
20 45
15 30
5
0
10
0
10
30
0
0
0
10
10
15
15
0
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6
2
4
10
13
13
8
8
16
9,19
9,19
5 Page 
Industrial Temperature
K4F661612E, K4F641612E
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRAS
tR C
tRP
tCRP
tRPC
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCSH
tRSH
tCAS
tC A H
COLUMN
ADDRESS
tRAL
tRCS
tR A C
OPEN
tA A
tOEA
tCAC
tCLZ
tRRH
tRCH
tOFF
tOEZ
DATA-OUT
OPEN
Don′t care
Undefined
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet K4F661612E.PDF ] | |
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