(PDF) SD1526-08 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	SD1526-08
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! ( DataSheet : www.DataSheet4U.com ) SD1526-08 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1526-08 is a Common Base Device Designed for IFF, DME, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Low Thermal Resistance MAXIMUM RATINGS IC 1.0 A VCES 45 V PDISS 21.9 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +150 °C θJC 8.0 °C/W PACKAGE STYLE 250 2L FLG (A) 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCBO IC = 1.0 mA BVCEO IC = 5.0 mA BVCES IC = 5.0 mA BVEBO IE = 1.0 mA ICES VCE = 28 V hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 45 45 45 3.5 1.0 10 200 UNITS V V V V mA --- PG VCE = 28 V Pout = 5.0 W f = 1025 to 1150 MHz 9.5 PULSE WIDTH =10 µS DUTY CYCLE =1.0% dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. www.DataSheet4U.com REV. A 1/1 1 page

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PDF SD1526-08 Data sheet ( Hoja de datos )