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PDF CEM4804 Data sheet ( Hoja de datos )
| Número de pieza | CEM4804 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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CEM4804
PRELIMINARY
Dual N-Channel Enhancement Mode Field Effect Transistor
5 FEATURES
30V , 7.9A , RDS(ON)=20mΩ @VGS=10V.
RDS(ON)=30mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
D1 D1 D2 D2
87 65
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
Ć7.9
Ć24
2
2
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
62.5
C/W
5-98
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CEM4804
VDD
ton toff
5 RL
VIN
td(on)
tr td(off)
90%
tf
90%
D VOUT
VGS
VOUT
10% INVERTED
10%
RGEN G
90%
S
VIN 50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
102 0
1
10-1
0.1
10-2
D=0.5
Duty Cycle=0.5
0.2
0.1
00.2.05
00.1.02
0.0.501
S0.in0g2le Pulse
0.0110-3
10-4
Single Pulse
1100-3-3
10-120-2
10-1 10-1
10 0
Square Wave Pulse Duration (sec)
PDM
PDM
t1
t2
t1
t2
1. RįJA (t)=1r. (Rt)į*JAR(įt)J=Ar (t) * RįJA
2. RįJA=Se2e. RDįaJtAa=sSheetDatasheet
3. TJM-TA =3P. *TJRMį-TJA =(t)PDM* RįJA (t)
4. Duty Cy4cl.eD, uDt=ytC1/yt2cle, D=t1/t2
1
1
10 10
10 2
100
Figure 13. Normalized Thermal Transient Impedance Curve
5-102
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CEM4804.PDF ] | |
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