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PDF KM644002A Data sheet ( Hoja de datos )
| Número de pieza | KM644002A | |
| Descripción | 1M X 4 Bit (with Oe)high-speed CMOS Static RAM | |
| Fabricantes | Samsung Semiconductor | |
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( DataSheet : www.DataSheet4U.com )
PRELIMINARY
KM644002A, KM644002AE, KM644002AI
CMOS SRAM
Document Title
1MKx4 Bit (with OE) High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial Temperature Range.
Revision History
RevNo. History
Rev. 0.0 Initial release with Design Target.
Rev. 0.5
Release to Preliminary Data Sheet.
0.1. Replace Design Target to Preliminary.
0.2. Delete 12ns part but add 17ns part.
0.3. Relax D.C and A.C parameters and insert new parameter(Icc1)
with the test condition.
0.3.1. Insert Icc1 parameter with the test condition as address is
increased with binary count.
0.3.2. Relax D.C and A.C parameters.
Items
Previous spec.
(15/ - /20ns part)
Relaxed spec.
(15/17/20ns part)
Icc
170/ - /160mA
200/195/190mA
tCW
10/ - /12ns
12/13/14ns
tAW
10/ - /12ns
12/13/14ns
tWP(OE=H)
10/ - /12ns
12/13/14ns
tWP1(OE=L)
12/ - /14ns
15/17/20ns
tDW
7/ - /9ns
8/9/10ns
Rev. 1.0
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Delete Icc1 parameter with the test condition.
1.3. Update D.C parameters.
Items
Previous spec.
(15/17/20ns part)
Updated spec.
(15/17/20ns part)
Icc
200/195/190mA
150/145/140mA
1.4. Add the test condition for VOH1 with Vcc=5V±5% at 25°C
1.5. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Low fixed)″
Rev. 2.0 2.1 Add extended and industrial temperature range parts.
Draft Data
Remark
Jun. 14th, 1996 Design Target
Sep. 16th, 1996 Preliminary
Jun. 5th, 1997 Final
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
February 1998
www.DataSheet4U.com
www.DataSheet4U.com
1 page  
KM644002A, KM644002AE, KM644002AI
WRITE CYCLE
Parameter
Symbol
KM644002A-15
Min Max
KM644002A-17
Min Max
Write Cycle Time
Chip Select to End of Write
tWC 15 - 17 -
tCW 12 - 13 -
Address Set-up Time
tAS 0 - 0 -
Address Valid to End of Write
tAW 12 - 13 -
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
tWP 12 - 13 -
tWP1
15
-
17
-
tWR 0 - 0 -
Write to Output High-Z
tWHZ
0
7
0
8
Data to Write Time Overlap
tDW 8 - 9 -
Data Hold from Write Time
tDH 0 - 0 -
End Write to Output Low-Z
tOW 3 - 3 -
NOTE: The above parameters are also guaranteed at extended and industrial temperature ranges.
PRELIMINARY
CMOS SRAM
KM644002A-20
Min Max
20 -
14 -
0-
14 -
14 -
20 -
0-
09
10 -
0-
3-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tOH
Previous Valid Data
tAA
tRC
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
OE
Data out
VCC
Current
ICC
ISB
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tPU
50%
tRC
tHZ(3,4,5)
tOHZ
Valid Data
tOH
tPD
50%
-5-
Rev 2.0
February 1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet KM644002A.PDF ] | |
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