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Número de pieza | TA31273FN | |
Descripción | AM RF/IF Detector IC | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TA31273FN
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA31273FN
AM RF/IF Detector IC
The TA31273FN is an RF/IF detector IC for AM radio.
The IC incorporates an RF amp, 2-level comparator, and local x8
circuit.
Features
• RF frequency: 240 to 450 MHz
• IF frequency: 10.7 MHz
• Operating voltage range: 3.0 to 5.5 V
• Current dissipation: 6.8 mA (typ.)
(Not operating local oscillator)
• Current dissipation at BS: 0 µA (typ.)
• Small package: 20-pin SSOP (0.65-mm pitch)
Block Diagram
Weight: 0.09 g (typ.)
SAW
20 19 18 17
FIL FIL RSSI BS
OUT IN
RSSI
16 15 14 13 12 11
MIX GND1 RF MONI RF RF
IN
OUT
DEC IN
Comparator
×8
OSC
IN VCC1 LOBS
123
MIX IF IF
OUT VCC2 IN DEC REF GND2 DATA
4 5 6 7 8 9 10
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2002-07-08
1 page TA31273FN
6. Battery-saving (BS) function and Lo switch LOBS function
The IC incorporates a battery-saving function and a Lo switch function. These functions offer the following
selection.
BS Pin/LOBS Pin
Circuit Status in the IC
Circuits in operation
• x8 circuit
• Mixer
H/H • RF amp
• Comparator
• IF amp
• RSSI
• Comparator capacitor charger circuit
H/L
x8 circuit only halted, Frequency set by
external circuit can be used as-is.
L/H x8 circuit only in operation
L/L All circuits halted
IC Current Dissipation
(at no signal)
6.8 mA (typ.)
3.8 mA (typ.)
3.0 mA (typ.)
0 mA (typ.)
7. RF amp gain 1
RF amp gain 1 (GV (RF) 1) is a reference value calculated as follows. Measure GRF in the following figure.
0.01 µF
1000 pF 6 pF
SAW
SG
16 14 11
50dBµV
46
GRF
Figure 4
GV (RF) 1 is calculated as follows:
GV (RF) 1 = GRF − GV (MIX)
8. IF amp gain
The intended value is 70dB.
9. Waveform-shaping output duty cycle
The specified range of electrical characteristics is only available for single-tone.
10. Local frequency range (after multiplying frequency by 8)
When the multiplier circuit is used, the local frequency will be in the range 250.7 MHz to 439.3 MHz.
5 2002-07-08
5 Page 25
20
15
10
5
0
−5
−10
−15
60
Mixer conversion gain vs.
Local input level characteristics
110°C
25°C
−40°C
Fin (MIX) = 314.9 MHz
Vin (MIX) = 50 dBµV
Fin (Lo) = 40.7 MHz
70 80 90 100 110 120
Local input level VLO (dBµV)
TA31273FN
S/N characteristics (IF input)
10
0
−40°C
25°C
110°C
−3
Fin (IF) = 10.7 MHz
AM = 90%
Fmod = 600 Hz
−5
110°C
−40°C
−7
−9
−10
25°C
10 30 50 70 90 110
IF IN input Vin (IF) (dBµVEMF)
130
FSK duty cycle vs.
Power supply voltage characteristics
60.0
55.0
50.0
45.0
40.0
1.00
−40°C
25°C
110°C
2.00
3.00
Fin (IF) = 10.7 MHz
Vin (IF) = 50 dBµVEMF
AM = 90%
Fmod = 600 Hz
4.00
5.00
6.00
Power supply voltage VCC (V)
RSSI output voltage characteristics
(IF input)
3.0
110°C
2.5
2.0
−40°C
25°C
1.5
1.0
0.5
40.0
0
Fin (IF) = 10.7 MHz
20 40 60 80 100
IF IN input level Vin (dBµVEMF)
120
Mixer conversion gain frequency
characteristics
25
20
−40°C
15
10
VCC = 5 V
Vin (MIX) = 50 dBµV
5
Vin (Lo) = 100 dBµV
LOBS = “L”
* Terminate the IF input
impedance.
0
100
25°C
110°C
Input frequency Fin (MIX) (MHz)
1000
11
2002-07-08
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet TA31273FN.PDF ] |
Número de pieza | Descripción | Fabricantes |
TA31273FN | AM RF/IF Detector IC | Toshiba Semiconductor |
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