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PDF STP10NK80Z Data sheet ( Hoja de datos )
| Número de pieza | STP10NK80Z | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP10NK80Z, STP10NK80ZFP,
STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™
Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
Type
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
VDSS
800V
800V
800V
RDS(on)
<0.90Ω
<0.90Ω
<0.90Ω
ID
9A
9A
9A
Pw
160 W
40 W
160 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeability
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
Applications
■ Switching application
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Part number
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
Marking
P10NK80Z
P10NK80ZFP
W10NK80Z
Package
TO-220
TO-220FP
TO-247
Packaging
Tube
Tube
Tube
March 2012
This is information on a product in full production.
Doc ID 8911 Rev 7
1/17
www.st.com
17
1 page  
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay Time
Fall time
Test conditions
VDD=400 V, ID=4.5A,
RG=4.7Ω, VGS=10V
See Figure 21
VDD=400 V, ID=4.5A,
RG=4.7Ω, VGS=10V
See Figure 21
Min. Typ. Max. Unit
30 ns
20 ns
65 ns
17 ns
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=±1mA
(open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 9. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=9A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A,
di/dt = 100A/µs,
VDD=45V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
- 9A
- 36 A
- 1.6 V
645
- 6.4
20
ns
µC
A
Doc ID 8911 Rev 7
5/17
5 Page 
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Figure 25. TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 8911 Rev 7
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STP10NK80Z.PDF ] | |
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