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Número de pieza | STP10NK60Z | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
ID
10 A
10 A
10 A
10 A
10 A
Pw
115
115
35
115
156
■ TYPICAL RDS(on) = 0.65 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■ LIGHTING
Sales Type
STB10NK60Z-1
STB10NK60ZT4
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
Marking
B10NK60Z-1
B10NK60Z
P10NK60ZFP
P10NK60Z
W10NK60Z
Package
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
September 2005
www.DataSheet4U.com
www.DRaetavS7heet4U.com
1/18
www.st.com
18
1 page STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD=10A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=8A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
Min.
Typ.
570
4.3
15
Max.
10
36
1.6
Unit
A
A
V
ns
µC
A
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
5/18
5 Page STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
DIM.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Ø
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA
mm.
TYP
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L3
L6
L7
L5
L2
123
L4
11/18
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet STP10NK60Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP10NK60Z | N-CHANNEL Power MOSFET | ST Microelectronics |
STP10NK60ZFP | N-CHANNEL Power MOSFET | ST Microelectronics |
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