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PDF STP10NB20FP Data sheet ( Hoja de datos )

Número de pieza STP10NB20FP
Descripción N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STP10NB20FP Hoja de datos, Descripción, Manual

( DataSheet : www.DataSheet4U.com )
STP10NB20
STP10NB20FP
N-CHANNEL 200V - 0.25 - 10A TO-220/TO-220FP
PowerMESH™ MOSFET
Table 1. General Features
Type
VDSS
RDS(on)
STP10NB20
200 V
< 0.40
STP10NB20FP 200 V
< 0.40
ID
10 A
6A
Figure 1. Package
FEATURES SUMMARY
TYPICAL RDS(on) = 0.25
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STP10NB20
STP10NB20FP
Marking
P10NB20
P10NB20FP
April 2004
www.DataSheet4U.com
Package
TO-220
TO-220FP
Packaging
TUBE
TUBE
REV.2
1/9
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1 page




STP10NB20FP pdf
Figure 3. Unclamped Inductive Load Test
Circuit
STP10NB20/FP
Figure 4. Unclamped Inductive Waveforms
Figure 5. Switching Times Test Circuits For
Resistive Load
Figure 6. Gate Charge Test Circuit
Figure 7. Test Circuit For Inductive Load
Switching And Diode Recovery Times
5/9

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