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PDF IRFF9110 Data sheet ( Hoja de datos )
| Número de pieza | IRFF9110 | |
| Descripción | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | |
| Fabricantes | International Rectifier | |
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( DataSheet : www.DataSheet4U.com )
PD - 90388
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on)
IRFF9110 -100V 1.2Ω
ID
-2.5A
IRFF9110
100V, P-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
-2.5
-1.6 A
-10
15 W
0.12
W/°C
±20 V
87 mJ
—A
— mJ
-5.5
-55 to 150
V/ns
oC
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
www.irf.com
1
01/23/01
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1 page  
Fig9. MaximumDrainCurrentVs.
CaseTemperature
IRFF9110
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig10a. SwitchingTimeTestCircuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig10b. SwitchingTimeWaveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFF9110.PDF ] | |
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