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PDF P3NB90FP Datasheet ( Hoja de datos )

Número de pieza P3NB90FP
Descripción STP3NB90FP
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



Total 10 Páginas
		
P3NB90FP Hoja de datos, Descripción, Manual
Sheet4U.com STSPT3NP3BN9B0F9P0N-CHANNEL 900V - 4 - 3.5 A TO-220/TO-220FP
ta PowerMeshMOSFET
.DaTYPE
VDSS RDS(on)
ID
Pw
wSTP3NB90
w STP3NB90FP
900 V < 4.2
900 V < 4.2
3.5 A 110 W
3.5 A 35 W
wwww.DataSheet4Us.coTmYPICAL RDS(on) = 4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms GATE CHARGE MINIMIZED
os VERY LOW INTRINSIC CAPACITANCES
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
Uvanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
t4coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
eunrivalled gate charge and switching characteris-
tics.
eAPPLICATIONS
hs HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
Ss DC-AC CONVERTERS FOR WELDING
taEQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
w.DaORDERING INFORMATION
wwSALES TYPE
MARKING
PACKAGE
PACKAGING
STP3NB90
STP3NB90FP
P3NB90
P3NB90FP
October 2002
TO-220
TO-220FP
www.DatTTaUUSBBEEheet41U/10.com

1 page

P3NB90FP pdf
Transconductance
STP3NB90 - STP3NB90FP
Static Drain-source On Resistance
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
5/10

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