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PDF DIM250WHS06-S000 Data sheet ( Hoja de datos )
| Número de pieza | DIM250WHS06-S000 | |
| Descripción | IGBT Chopper Module | |
| Fabricantes | Dynex Semiconductor | |
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DIM250WHS06-S000
DIM250WHS06-S000
Half Bridge IGBT Module
PDS5676-1.3 February 2004
FEATURES
I n - Channel
I High Switching Speed
I Low Forward Voltage Drop
I Isolated Base
APPLICATIONS
I PWM Motor Control
I UPS
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM250WHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
KEY PARAMETERS
VCES
600V
V * (typ) 2.1V
CE(sat)
IC (max) 250A
IC(PK)
(max) 500A
*(measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
1(E1C2)
2(E2)
3(C1)
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order as:
DIM250WHS06-S000
Note: When ordering, use complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
DIM250WHS06-S000
TYPICAL CHARACTERISTICS
500
Common emitter
450
Tcase = 25˚C
Vce is measured at power
busbars and not the
400 auxiliary terminals
350
300
250
200
150
100
50
0
0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1 2.0 3
4
Collector-emitter voltage, Vce - (V)
5
Fig.3 Typical output characteristics
45
Conditions:
Tcase = 125ºC
40 Vcc = 300V
Rg = 4.7 ohms
35
Eon
Eoff
Erec
30
25
20
15
10
5
0
0 50 100 150 200 250 300
Collector current, IC - (A)
Fig.4 Typical switching energy vs collector current
500
Common emitter
450
Tcase = 125˚C
Vce is measured at power
busbars and not the
400 auxiliary terminals
350
300
250
200
150
100
50
0
0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
40
Conditions:
Tcase = 125ºC
35 Vcc = 300V
IC = 250A
30
25
20
15
Eoff
Eon
10 Erec
5
0
2 4 6 8 10 12 14 16
Gate Resistance, Rg - (Ohms)
Fig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| PDF Descargar | [ Datasheet DIM250WHS06-S000.PDF ] | |
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