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PDF 29EE011 Data sheet ( Hoja de datos )

Número de pieza 29EE011
Descripción W29EE011
Fabricantes Winbond 
Logotipo Winbond Logotipo



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No Preview Available ! 29EE011 Hoja de datos, Descripción, Manual

W29EE011
128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The
www.DataSheet4U.codmevice can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 µS
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 µA (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
Publication Release Date: July 1999
- 1 - Revision A12

1 page




29EE011 pdf
W29EE011
TABLE OF OPERATING MODES
Operating Mode Selection
Operating Range = 0 to 70°C (Ambient Temperature), VDD = 5V ±10%, VSS = 0V, VHH = 12V
www.DataSheet4U.com
MODE
CE OE WE
PINS
ADDRESS
Read
VIL VIL VIH AIN
Write
VIL VIH VIL AIN
Standby
VIH X X X
Write Inhibit
X VIL X X
X X VIH X
Output Disable
X VIH X X
5-Volt Software Chip Erase VIL VIH VIL AIN
Product ID
VIL VIL VIH A0 = VIL; A1-A16 = VIL;
A9 = VHH
VIL VIL VIH A0 = VIH; A1-A16 = VIL;
A9 = VHH
DQ.
Dout
Din
High Z
High Z/DOUT
High Z/DOUT
High Z
DIN
Manufacturer Code DA
(Hex)
Device Code
C1 (Hex)
Publication Release Date: July 1999
- 5 - Revision A12

5 Page





29EE011 arduino
W29EE011
Read Cycle Timing Parameters
(VCC = 5.0V ±10%, VCC = 5.0 ±5% for 70 nS, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
W29EE011-90
MIN. MAX.
www.DataSheet4U.comRead Cycle Time
TRC 90 -
Chip Enable Access Time
TCE - 90
Address Access Time
TAA - 90
Output Enable Access Time
TOE - 45
CE Low to Active Output
TCLZ 0 -
OE Low to Active Output
TOLZ 0 -
CE High to High-Z Output
TCHZ
- 45
OE High to High-Z Output
TOHZ
- 45
Output Hold from Address Change
TOH 0 -
W29EE011-15
MIN.
150
-
-
-
0
MAX.
-
150
150
70
-
0-
- 45
- 45
0-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
Byte/Page-write Cycle Timing Parameters
PARAMETER
Write Cycle (Erase and Program)
Address Setup Time
Address Hold Time
WE and CE Setup Time
WE and CE Hold Time
OE High Setup Time
OE High Hold Time
CE Pulse Width
WE Pulse Width
WE High Width
Data Setup Time
Data Hold Time
Byte Load Cycle Time
Byte Load Cycle Time-out
SYMBOL
TWC
TAS
TAH
TCS
TCH
TOES
TOEH
TCP
TWP
TWPH
TDS
TDH
TBLC
TBLCO
MIN.
-
0
50
0
0
10
10
70
70
150
50
10
0.22
300
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
(a) High level signal's reference level is VIH and (b) low level signal's reference level is VIL.
MAX.
10
-
-
-
-
-
-
-
-
-
-
-
200
-
UNIT
mS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
µS
- 11 -
Publication Release Date: July 1999
Revision A12

11 Page







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