DataSheet.es    


PDF RD07MVS1 Data sheet ( Hoja de datos )

Número de pieza RD07MVS1
Descripción Silicon MOSFET Power Transistor
Fabricantes Mitsubishi Electric 
Logotipo Mitsubishi Electric Logotipo



Hay una vista previa y un enlace de descarga de RD07MVS1 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! RD07MVS1 Hoja de datos, Descripción, Manual

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
•High power gain:
2
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
mAPPLICATION
oFor output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
t4U.cABSOLUTE MAXIMUM RATINGS
e(Tc=25°C UNLESS OTHERWISE NOTED)
eSYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
hVGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
SPin Input Power
Zg=Zl=50
taID Drain Current
-
Tj Junction Temperature
-
aTstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
.DNote 1: Above parameters are guaranteed independently.
RATINGS
30
+/- 20
50
1.5
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
wSYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
wIDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 200
wIGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
UNIT
uA
uA
(0.25)
VTH
mPout1
.coηD1
Pout2
t4UηD2
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
ataSheeLoad VSWR tolerance
VDS=12V, IDS=1mA
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(PinControl)
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(PinControl)
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
.DNote : Above parameters , ratings , limits and conditions are subject to change.
1.4 1.7 2.4
78 -
55 60
-
78 -
50 55
-
No destroy
No destroy
V
W
%
W
%
-
-
wwwRD07MVS1
MITSUBISHI ELECTRIC
1/8
REV.7 2 Apr. 2004

1 page




RD07MVS1 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
W 19mm
19mm
W
C2 10uF,50V
4 .7 kO HM
RD07MVS1
175MHz
22pF
L
R F-in
19.5m m 24.5m m 1m m 11.5m m 3m m
6.5m m 28.5m m
3.5m m 11.5m m
5mm 62pF
6 8 O HM
140pF
100pF
180pF
22pF
16pF
10mm 5mm
62pF RF-out
56pF
L: Enam eled wire 7Turns,D :0.43m m ,2.4 6m m O .D
C 1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :line width=1.0m m
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
R F -in
C1
W 19mm
19mm W
C2 10uF,50V
4.7kO HM
RD07MVS1
520MHz
20pF
L
6.5m m 6.5m m
4 4 .5 m m
46m m 9m m 3.5m m 3.5m m
R F -o ut
68pF
3.5m m
68pF
37pF 10pF
20pF 6pF 18pF
L: Enam eled wire 5Turns,D :0.43m m ,2.46m m O .D
C 1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :ine width=1.0m m
RD07MVS1
MITSUBISHI ELECTRIC
5/8
REV.7 2 Apr. 2004

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet RD07MVS1.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RD07MVS1Silicon MOSFET Power TransistorMitsubishi Electric
Mitsubishi Electric
RD07MVS1BSilicon MOSFET Power TransistorMitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
RD07MVS2Silicon MOSFET Power TransistorMitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar