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Número de pieza | RD07MVS1 | |
Descripción | Silicon MOSFET Power Transistor | |
Fabricantes | Mitsubishi Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RD07MVS1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
•High power gain:
2
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
mAPPLICATION
oFor output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
t4U.cABSOLUTE MAXIMUM RATINGS
e(Tc=25°C UNLESS OTHERWISE NOTED)
eSYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
hVGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
SPin Input Power
Zg=Zl=50Ω
taID Drain Current
-
Tj Junction Temperature
-
aTstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
.DNote 1: Above parameters are guaranteed independently.
RATINGS
30
+/- 20
50
1.5
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
wSYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
wIDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 200
wIGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
UNIT
uA
uA
(0.25)
VTH
mPout1
.coηD1
Pout2
t4UηD2
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
ataSheeLoad VSWR tolerance
VDS=12V, IDS=1mA
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(PinControl)
f=175MHz,Idq=700mA,Zg=50Ω
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(PinControl)
f=520MHz,Idq=750mA,Zg=50Ω
Load VSWR=20:1(All Phase)
.DNote : Above parameters , ratings , limits and conditions are subject to change.
1.4 1.7 2.4
78 -
55 60
-
78 -
50 55
-
No destroy
No destroy
V
W
%
W
%
-
-
wwwRD07MVS1
MITSUBISHI ELECTRIC
1/8
REV.7 2 Apr. 2004
1 page ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
W 19mm
19mm
W
C2 10uF,50V
4 .7 kO HM
RD07MVS1
175MHz
22pF
L
R F-in
19.5m m 24.5m m 1m m 11.5m m 3m m
6.5m m 28.5m m
3.5m m 11.5m m
5mm 62pF
6 8 O HM
140pF
100pF
180pF
22pF
16pF
10mm 5mm
62pF RF-out
56pF
L: Enam eled wire 7Turns,D :0.43m m ,2.4 6m m O .D
C 1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :line width=1.0m m
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
R F -in
C1
W 19mm
19mm W
C2 10uF,50V
4.7kO HM
RD07MVS1
520MHz
20pF
L
6.5m m 6.5m m
4 4 .5 m m
46m m 9m m 3.5m m 3.5m m
R F -o ut
68pF
3.5m m
68pF
37pF 10pF
20pF 6pF 18pF
L: Enam eled wire 5Turns,D :0.43m m ,2.46m m O .D
C 1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :ine width=1.0m m
RD07MVS1
MITSUBISHI ELECTRIC
5/8
REV.7 2 Apr. 2004
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RD07MVS1.PDF ] |
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