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PDF NTGS3446 Data sheet ( Hoja de datos )
| Número de pieza | NTGS3446 | |
| Descripción | Power MOSFET 5.1 Amp 20 Volts | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTGS3446
Power MOSFET
5.1 Amps, 20 Volts
N−Channel TSOP−6
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
http://onsemi.com
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature
m• Pb−Free Package is Available
oApplications
.c• Power Management in portable and battery−powered products, i.e.
computers, printers, PCMCIA cards, cellular and cordless
• Lithium Ion Battery Applications
• Notebook PC
t4UMAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
eDrain−to−Source Voltage
eGate−to−Source Voltage
Thermal Resistance
hJunction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
SDrain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp t 10 ms)
taThermal Resistance
Junction−to−Ambient (Note 2)
aTotal Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
.D− Pulsed Drain Current (tp t 10 ms)
Thermal Resistance
Junction−to−Ambient (Note 3)
wTotal Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
w− Pulsed Drain Current (tp t 10 ms)
Source Current (Body Diode)
w .comOperating and Storage Temperature Range
VDSS
VGS
20
±12
V
V
RqJA
Pd
ID
IDM
244 °C/W
0.5 W
2.5 A
10 A
RqJA
Pd
ID
IDM
128 °C/W
1.0 W
3.6 A
14 A
RPqJdA
ID
IDM
IS
TJ, Tstg
62.5
2.0
5.1
20
5.1
−55 to
150
°C/W
W
A
A
A
°C
UMaximum Lead Temperature for Soldering
t4Purposes for 10 seconds
TL 260 °C
eMaximum ratings are those values beyond which device damage can occur.
eMaximum ratings applied to the device are individual stress limit values (not
hnormal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
Sreliability may be affected.
ta1. Minimum FR−4 or G−10PCB, operating to steady state.
a2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), operating to steady state.
.D3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), t < 5.0 seconds.
ww Semiconductor Components Industries, LLC, 2005
wMarch, 2005 − Rev. 4
1
V(BR)DSS
20 V
RDS(on) TYP
36 mW @ 4.5 V
ID MAX
5.1 A
N−Channel
Drain 1 2 5 6
Gate 3
Source 4
MARKING
DIAGRAM
TSOP−6
CASE 318G
446W
1 STYLE 1
1
446 = Device Code
W = Work Week
PIN ASSIGNMENT
Drain Drain Source
654
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3446T1
TSOP−6 3000/Tape & Reel
NTGS3446T1G
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGS3446/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NTGS3446.PDF ] | |
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