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Número de pieza | NTGS3433T1 | |
Descripción | Power MOSFET -3.3 Amp -12 Volts | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTGS3433T1
MOSFET
−3.3 Amps, −12 Volts
P−Channel TSOP−6
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
http://onsemi.com
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
mMAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
oRating
Symbol Value Unit
.cDrain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
UJunction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
t4Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
eMaximum Operating Power Dissipation
Maximum Operating Drain Current
eThermal Resistance
hJunction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current
S− Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
taMaximum Operating Power Dissipation
Maximum Operating Drain Current
aOperating and Storage Temperature Range
VDSS
VGS
RθJA
Pd
ID
IDM
Pd
ID
RθJA
Pd
ID
IDM
Pd
ID
TJ, Tstg
−12
"8.0
Volts
Volts
62.5
2.0
−3.3
°C/W
Watts
Amps
−20
1.0
−2.35
Amps
Watts
Amps
128 °C/W
1.0 Watts
−2.35
−14
0.5
−1.65
−55 to
150
Amps
Amps
Watts
Amps
°C
Maximum Lead Temperature for Soldering TL 260 °C
.DPurposes for 10 Seconds
1 Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), t t 5.0 seconds.
w2 Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), operating to steady state.
VDSS
−12 V
RDS(ON) TYP
75 mΩ @ VGS = −4.5 V
ID MAX
−3.3 A
P−Channel
1256
DRAIN
3
GATE
4
SOURCE
1
TSOP−6
CASE 318G
STYLE 1
MARKING
DIAGRAM
433
x
433 = Device Code
x = Date Code
PIN ASSIGNMENT
Drain Drain Source
6 54
ww www.DataSheet4U.com© Semiconductor Components Industries, LLC, 2004
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3433T1
TSOP−6 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
April, 2004 − Rev. 1
NTGS3433T1/D
1 page NTGS3433T1
A
L
65 4
S
12 3
G
0.05 (0.002)
H
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE L
B
D
M
CJ
K
SOLDERING FOOTPRINT*
2.4
0.094
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 2.90 3.10 0.1142 0.1220
B 1.30 1.70 0.0512 0.0669
C 0.90 1.10 0.0354 0.0433
D 0.25 0.50 0.0098 0.0197
G 0.85 1.05 0.0335 0.0413
H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102
K 0.20 0.60 0.0079 0.0236
L 1.25 1.55 0.0493 0.0610
M 0 _ 10 _ 0 _ 10 _
S 2.50 3.00 0.0985 0.1181
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTGS3433T1.PDF ] |
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NTGS3433T1 | Power MOSFET -3.3 Amp -12 Volts | ON Semiconductor |
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