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Número de pieza | EGN21A090IV | |
Descripción | High Voltage - High Power GaN-HEMT | |
Fabricantes | ETC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EGN21A090IV (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Eudyna GaN-HEMT 90W EGN21A090IV
Preliminary
FEATURES
・High Voltage Operation : VDS=50V
・High Gain: 15dB(typ.) at Pout=42dBm(Avg.)
・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.)
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability
High Voltage - High Power GaN-HEMT
DESCRIPTION
The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency,
high gain, ease of matching, greater consistency and broad bandwidth
mfor high power L-band amplifiers with 50V operation. This device is
targeted for high voltage, low current operation in digitally modulated
obase station applications - ideally suited for W-CDMA base station
amplifiers and other HPA designs while offering ease of use.
.cABSOLUTE MAXIMUM RATINGS
Item
Symbol Condition
Rating
at4rUyDrain-Source Voltage
Gate-Source Voltage
VDS
VGS
Tc=25oC
120
-5
Total Power Dissipation
Pt
160
Storage Temperature
Tstg
-65 to +175
ineChannel Temperature
Tch
250
Unit
V
V
W
oC
oC
eRECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
limhItem
Symbol Condition
Limit
Unit
DC Input Voltage
re SForward Gate Current
taReverse Gate Current
Channel Temperature
VDS
IGF
IGR
Tch
RG=5 Ω
RG=5 Ω
50
<19.4
>-7.2
200
V
mA
mA
oC
P aELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
.DItem
Symbol Condition
Min.
Pinch-Off Voltage
Vp VDS=50V IDS=36mA -1.0
wGate-Drain Breakdown Voltage
VGDO
IGS= -18 mA
-
w3rd Order Inter modulation Distortion IM3 VDS=50V
-
wPower Gain
Gp IDS(DC)=500mA
14.0
Limit
Typ.
-2.0
-350
-32
15.0
Max.
-3.5
-
-
-
Unit
V
V
dBc
dB
Drain Efficiency
omThermal Resistance
ηd
Pout=42dBm(Avg.)
-
35 -
%
Note 1
Rth Channel to Case
- 1.2 1.4 oC/W
U.cNote 1 : IM3 and Gain test condition as follows:
t4IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
e67% clipping modulation(Peak/Avg. = [email protected]% Probability(CCDF)) measured
eover 3.84MHz at fo-10MHz and fI+10MHz.
taShEdition 1.0
www.DaMay 2005
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet EGN21A090IV.PDF ] |
Número de pieza | Descripción | Fabricantes |
EGN21A090IV | High Voltage - High Power GaN-HEMT | ETC |
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