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PDF GMF05C-HS3 Data sheet ( Hoja de datos )
| Número de pieza | GMF05C-HS3 | |
| Descripción | ESD Protection Diode Array | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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VISHAY
GMF05C - HS3
Vishay Semiconductors
ESD Protection Diode Array
Features
• Transient protection for data lines as per
IEC 1000 - 4 - 2 (ESD) 15 kV (air), 8 kV (contact)
IEC 1000 - 4 - 4 (EFT) 40 A ( tp = 5/50 ns)
IEC 1000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs)
• Small package for use in portable electronics
• Bidirectional protection of 4 I/O lines
• Unidirectional protection of 5 I/O lines
• Low leakage current
654
• Low operating and clamping voltages
• Ideal for cellular handsets, cordless phones, note-
books, handhelds and digital cameras
omMechanical Data
.cCase: Leadless plastic package with heatsink
Molding Compound Flammability Rating:
UL 94 V-0
UTerminals: High temperature soldering guaranteed:
t4250 °C/10 sec. at terminals
Weight: approx. 5.1 mg
Marking Code: TBD
16905
123
eeAbsolute Maximum Ratings
Parameter
Test condition
hPeak pulse power
SPeak pulse current
8/20 µs waveform
8/20 µs waveform
Sub type
Symbo
l
Pppm
Ipp
Value
200
12
Unit
W
A
taThermal Characteristics
aParameter
Operating temperature
.DStorage temperature
Lead soldering temperature (10
sec.)
Test condition
Symbol
Tj
TSTG
TL
Value
- 55 to + 125
- 55 to + 150
260
Unit
°C
°C
°C
wElectrical Characteristics
wParameter
wReverse stand-off voltage
Test condition
Sub type Symbol Min Typ. Max Unit
VRWM
5V
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
Peak forward voltage
Junction capacitance between I/O
pins and Gnd
It = 1 mA
VRWM = 5 V
IPP = 1 A, 8/20 µs waveform
IPP = 12 A, 8/20 µs waveform
IF = 1 A, 8/20 µs waveform
VR = 0 V, f = 1 MHz
Document Number 85654
Rev. 2, 04-Nov-02
VBR
mIR
oVC
.cVC
UVF
t4Cj
6
V
10 µA
9.5 V
12.5 V
1.5 V
150 pF
ataSheewww.vishay.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GMF05C-HS3.PDF ] | |
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