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PDF IRLR024N Data sheet ( Hoja de datos )
| Número de pieza | IRLR024N | |
| Descripción | (IRLU/R024N) Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 91363E
IRLR024N
IRLU024N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Surface Mount (IRLR024N)
l Straight Lead (IRLU024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
D
VDSS = 55V
RDS(on) = 0.065Ω
ID = 17A
S
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
I-Pak
IRLR024N IRLU024N
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
50
110
Units
°C/W
1
2/10/00
1 page  
IRLR/U024N
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0 .2 0
0 .1 0
0.05
0 .0 2
0.01
0.1
S IN G LE P U LS E
(TH ERM AL RESPO NSE)
0.01
0.00001
0.0001
PD M
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. P eak TJ = P D M x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
A
1
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRLR024N.PDF ] | |
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