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PDF SD1222-5 Data sheet ( Hoja de datos )
| Número de pieza | SD1222-5 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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SD1222-5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1222-5 is a transistor
designed primarily for 12.5 V AM
Class-C amplifiers in the118-136 MHz
band and 28 V Class-C RF amplifiers
PACKAGE STYLE .380 4L FLG
in ground stations.
mFEATURES:
o• PG = 8.2 dB min. at 5 W/30 MHz
• IMD3 = -30 dBc max. at 20 W(PEP)
.c• Omnigold™ Metalization System
• Emitter Ballasting
t4UMAXIMUM RATINGS
IC 3.0 A
eVCBO
65 V
eVCEO
35 V
hVEBO
4.0 V
SPDISS
30 W @ TC = 25 °C
taTJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
aθJC 5.83 °C/W
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
BE
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
.DCHARACTERISTICS TC = 25 °C
wSYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
wBVCES
IC = 200 mA
w mBVEBO
IE = 10 mA
.coICBO
VCB = 30 V
UICES VCE = 30 V
TA = 125°C
t4hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
1.0
10
5.0
UNITS
V
V
V
mA
mA
---
heeCob VCB = 30 V
f = 1.0 MHz
35 pF
taSGP VCC = 27 V
POUT = 20 W
f = 136 MHz
35 pF
A D V A N C E D S E M I C O N D U C T O R, I NwCw. w.Da7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
REV. A
1/1
Specifications are subject to change without notice.
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet SD1222-5.PDF ] | |
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