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Número de pieza | RN2607 | |
Descripción | (RN2607 - RN2609) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RN2607 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1607~RN1609
Equivalent Circuit andBias Resistor Values
Type No.
RN2607
RN2608
RN2609
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN2607~RN2609
RN2607
RN2608
RN2609
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Eauivalent Circuit (Top View)
Rating
−50
−50
−6
−7
−15
−100
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-05
1 page Type Name
RN2607
RN2608
RN2609
Marking
RN2607~RN2609
5 2001-06-05
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RN2607.PDF ] |
Número de pieza | Descripción | Fabricantes |
RN2601 | (RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN2602 | (RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN2603 | (RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN2604 | (RN2601 - RN2606) Switching / Inverter Circuit / Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
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