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PDF T410-700x Data sheet ( Hoja de datos )
| Número de pieza | T410-700x | |
| Descripción | (T410-xxxx) 4A Triacs | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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®
SNUBBERLESS™ & LOGIC LEVEL
T4 Series
4A TRIACS
MAIN FEATURES:
A2
Symbol
Value
Unit
IT(RMS)
mVDRM/VRRM
oIGTT (Q1)
4
600 to 800
5 to 35
A
V
mA
U.cDESCRIPTION
t4Based on ST’s Snubberless / Logic level technolo-
gy providing high commutation performances, the
eT4 series is suitable for use on AC inductive loads.
They are recommended for applications using
euniversal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
hAvailable in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
taSE81734).
G
A1
A2
A2
A1 A2
G
DPAK
(T4-B)
A1
A2
G
IPAK
(T4-H)
A2
A1
A2
G
TO-220AB
(T4-T)
A1
A2
G
ISOWATT 220AB
(T4-W)
aABSOLUTE MAXIMUM RATINGS
.DSymbol
Parameter
IT(RMS)
wwwITSM
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
DPAK / IPAK
TO-220AB
ISOWATT 220AB
F = 50 Hz
F = 60 Hz
Tc = 110°C
Tc = 105°C
t = 20 ms
t = 16.7 ms
Value
4
30
31
Unit
A
A
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
June 2003 - Ed: 5
tp = 10 ms
5.1
.comF = 120 Hz
Tj = 125°C
50
Sheet4Utp = 20 µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
A²s
A/µs
A
W
°C
www.Data 1/8
1 page  
T4 Series
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
500
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
Fig. 7: On-state characteristics (maximum
values).
ITM(A)
30.0
10.0
Tj=Tj max.
10
1
0.01
tp (ms)
0.10
1.00
I²t
10.00
1.0
VTM(V)
Tj max.:
Vto= 0.90 V
Rd= 120 mΩ
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
T405
(dV/dt)c (V/µs)
1.0 10.0
T435
T410
100.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
0 25 50 75
100 125
Fig. 10: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
90
DPAK
80
70
60
50
40
30
20
10 S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet T410-700x.PDF ] | |
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