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PDF B9NC60 Data sheet ( Hoja de datos )
| Número de pieza | B9NC60 | |
| Descripción | STB9NC60 | |
| Fabricantes | ST Microelectronics | |
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Hay una vista previa y un enlace de descarga de B9NC60 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STB9NC60
www.DataSheet4U.cSoTmB9NC60-1
600 V
600 V
< 0.75 Ω
< 0.75 Ω
9.0 A
9.0 A
s TYPICAL RDS(on) = 0.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
ID
IDM (1)
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
February 2002
Value
600
600
±30
9
5.7
36
125
1.0
3.5
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 150
°C
(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/10
1 page  
STB9NC60 / STPBNC60-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet B9NC60.PDF ] | |
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