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PDF UPD4416016 Data sheet ( Hoja de datos )

Número de pieza UPD4416016
Descripción 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4416016
16M-BIT CMOS FAST SRAM
1M-WORD BY 16-BIT
Description
The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V ± 0.3 V.
The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
Features
1,048,576 words by 16 bits organization
Fast access time : 15, 17 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Output Enable input for easy application
Ordering Information
Part number
Package
µPD4416016G5-A15-9JF 54-PIN PLASTIC TSOP (II)
µPD4416016G5-A17-9JF
(10.16 mm (400))
Supply voltage
V
3.3 ± 0.3
Access time
ns (MAX.)
15
17
Supply current mA (MAX.)
At operating
At standby
250 10
240
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14081EJ5V0DS00 (5th edition)
Date Published December 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999

1 page




UPD4416016 pdf
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
LVTTL Interface
Input Waveform (Rise and Fall Time 3 ns)
3.0 V
GND
1.5 V
Test Points
1.5 V
Output Waveform
µPD4416016
1.5 V
Test Points
1.5 V
Output Load
AC characteristics directed with the note should be measured with the output load shown in Figure 1 or Figure 2.
Figure 1
(for tAA, tACS, tOE, tABD, tOH)
VTT = +1.5 V
Figure 2
(for tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW)
+3.3 V
I/O (Output)
ZO = 50
50
30 pF
CL
I/O (Output)
351
317
5 pF
CL
Remark CL includes capacitances of the probe and jig, and stray capacitances.
Data Sheet M14081EJ5V0DS
5

5 Page





UPD4416016 arduino
µPD4416016
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet M14081EJ5V0DS
11

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