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PDF STU1225PL Data sheet ( Hoja de datos )
| Número de pieza | STU1225PL | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STU1225PL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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t4U.com S T U /D 1255P LSamHop Microelectronics Corp.
Arp,20 2005 ver1.1
heeP-C hannel E nhancement Mode Field E ffect Transistor
.DataSPR ODUCT S UMMAR Y
wV DS S ID R DS (ON) ( m W ) Max
ww .com-55V
-12A
110 @ VGS = -10V
145 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
UD
t4G
S
eSTU SERIES
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
heAB S OLUTE MAXIMUM R ATINGS
SP a ra meter
taDrain-S ource Voltage R ating
Drain-S ource Voltage
aGate-S ource Voltage
.DDrain Current-Continuous a @ Ta
w-Pulsed b
25 C
70 C
(TA=25 C unles s otherwis e noted)
S ymbol
V s pike d
VDS
VGS
ID
Limit
60
-55
20
-12
-10
Unit
V
V
V
A
A
IDM -23
A
w .comDrain-S ource Diode Forward Current a IS -15
A
w et4UMaximum Power Dissipation a
SheOperating Junction and S torage
taTemperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
50
35
-55 to 175
W
C
.DaTHE R MAL CHAR ACTE R IS TICS
wThermal R esistance, Junction-to-C ase
R JC
3 C/W
wwThermal R esistance, Junction-to-Ambient
1R JA
50
C /W
1
1 page  
S T U/D1255P L
V DD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 12. S witching Waveforms
6
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
Single Pulse
P DM
5 t1
t2
on 1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
100
1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STU1225PL.PDF ] | |
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