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Número de pieza | FDM3622 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDM3622 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! January 2005
FDM3622
N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ
Features
rDS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A
Qg(tot) = 13nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
Applications
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Formerly developmental type 82744
MicroFET 3.3 x 3.3
18
27
36
45
©2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
1
www.fairchildsemi.com
1 page Typical Characteristics TC = 25°C unless otherwise noted
100
100µs
10
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(ON)
1ms
10ms
0.1
1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
120
Figure 5. Forward Bias Safe Operating Area
20
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
10
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8 VDD = 15V
6
TJ = 150oC
4
TJ = 25oC
2
TJ = -55oC
10
PULSE DURATION = 80µs
VGS = 10V
DUTY CYCLE = 0.5% MAX
8 TA = 25oC
VGS = 5V
6
4 VGS = 4.7V
VGS = 4.5V
2
0
3.0
3.5 4.0 4.5 5.0 5.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
6.0
0
0
0.5 1.0 1.5 2.0 2.5
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.0
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
70
ID = 4.4A
60
ID = 0.2A
50
40
4
68
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80
VGS = 10V, ID = 4.4A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
5
www.fairchildsemi.com
5 Page TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDM3622 Rev. A
11 www.fairchildsemi.com
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet FDM3622.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDM3622 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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