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PDF FDM2452NZ Data sheet ( Hoja de datos )
| Número de pieza | FDM2452NZ | |
| Descripción | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench®
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
Features
• 8.1 A, 30 V
RDS(ON) = 21 mΩ @ VGS = 4.5 V
RDS(ON) = 25 mΩ @ VGS = 2.5 V
• ESD protection Diode(note 3)
• Low Profile – 0.8 mm maximum – in the new
package MicroFET 2 x 5 mm
PIN 1
S1 S1 G1
S2 S2 G2
MLP 2x5
Bottom Drain Contact
G2 4 Q2
3 G1
S2 5
2 S1
S2 6
Q1 1 S1
Bottom Drain Contact
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2452Z
FDM2452NZ
13’’
Ratings
30
±12
8.1
30
2.2
0.8
–55 to +150
55
145
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDM2452NZ Rev C1
1 page  
Dimensional Outline and Pad Layout
FDM2452NZ Rev C1
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDM2452NZ.PDF ] | |
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