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PDF DL3148-033 Data sheet ( Hoja de datos )

Número de pieza DL3148-033
Descripción Laser Diode
Fabricantes Sanyo 
Logotipo Sanyo Logotipo



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No Preview Available ! DL3148-033 Hoja de datos, Descripción, Manual

Ordering number : EN5860A
om DL-3148-033
Red Laser Diode
heet4U.c DL-3148-033Index Guided AlGaInP Laser Diode
.DataSOverview
wThe DL-3148-033 is index guided 635 nm (Typ.) AlGaInP laser diode with
wwlow threshold current and high operating temperature. The low threshold
Package Dimensions
0
ø5.6 – 0.025
Tolerance : ±0.2
Unit : mm
current and short wavelength are achieved by a strained multiple quantum
well active layer. The lasing wavelength is 635nm which is 8 times
brighter than that of 670nm lasers. The DL-3148-033 is suitable for
mapplications such as bar-code scanners, laser printer, and other optical
information systems.
.coFeatures
U•Short wavelength
•Low threshold current
t4•High operating temperature
•Small package
: 635 nm (Typ.)
: Ith = 40 mA (Typ.)
: 5 mW at 50°C
: 5.6 mmØ
eeAbsolute Maximum Ratings at Tc=25°C
hParameter
Symbol
SLight Output
Po
taReverse Voltage Laser
PIN
VR
Operating Temperature Topr
aStorage Temperature
Tstg
Ratings
5
2
30
---10 to +50
---40 to +85
Unit
mW
V
°C
°C
ø4.4
ø3.55±0.1
ø1.6
Effective window diameter 1.0min.
13
Top view
2
1.0±0.1
LD facet
ø1.4max.
3–ø0.45±0.1
Pin No. 1 2 3 ø2.0
5.6mm ø stem
Electrical Connection
13
LD PD
.DElectrical and Optical Characteristics at Tc=25°C
2
– power supply system
wParameter
wThreshold Current
wOperating Current
Symbol
Ith
Iop
Condition Min. Typ. Max. Unit
CW -- 40 60 mA
Po=5mW
--
55 75 mA
Operating Voltage
mLasing Wavelength
oBeam g) Perpendicular
.cDivergence Parallel
UOff Axis
Perpendicular
t4Angle
Parallel
eeDifferential Efficiency
hMonitoring Output Current
taSAstigmatism
Vop
λp
θ
θ //
θ
θ //
dPo/dIop
Im
As
Po=5mW
Po=5mW
Po=5mW
Po=5mW
--
--
--
Po=5mW
Po=5mW
--
--
25
6
--
--
--
0.1
--
2.2 2.4
V
635 640 nm
35 40 deg.
8 10 deg.
-- ±3 deg.
-- ±3 deg.
0.4 -- mW/mA
0.2 0.5 mA
8 -- µm
ag) Full angle at half maximum note : The above product specifications are subject to change without notice.
w.DSANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
wTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
wN2798 GI / N2897 GI, (IM) No.5860 1/3

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