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Número de pieza | VN10LF | |
Descripción | N-Channel Enhancement Mode Vertical DMOS FET | |
Fabricantes | Zetex Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VN10LF (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
* 60 Volt VDS
* RDS(on)=5Ω
PARTMARKING DETAIL – MY
VN10LF
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 60 V
Continuous Drain Current at Tamb = 25°C
ID
150 mA
Pulsed Drain Current
IDM 3 A
Gate Source Voltage
VGS
± 20 V
Power Dissipation at Tamb = 25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V ID=100µA, VGS=0V
Gate-Source
Breakdown Voltage
VGS(th)
0.8
2.5 V
ID=1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
IGSS
IDSS
100 nA
10 µA
VGS=± 20V, VDS=0V
VDS=60 V, VGS=0V
On State Drain
Current(1)
ID(on)
750
mA VDS=15 V, VGS=10V
Static Drain Source On
State Resistance (1)
Forward
Transconductance
(1)(2)
RDS(on)
gfs
100
5.0 Ω
7.5 Ω
VGS=10V, ID=500mA
VGS=5V, ID=200mA
mS VDS=15V, ID=500mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
60 pF
25 pF VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance (2)
Crss
5 pF
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
t(on)
t(off)
3 10 ns
4 10 ns VDD ≈15V, ID=600mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
3 - 308
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet VN10LF.PDF ] |
Número de pieza | Descripción | Fabricantes |
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