(PDF) 11EQ10 Datasheet - Low Forward Voltage drop Diode

Número de pieza	11EQ10
Descripción	Low Forward Voltage drop Diode
Fabricantes	Nihon Inter Electronics
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No Preview Available ! SBD Type :11EQ10 OFUETLAITNUERDERSAWING * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.21g Rating Symbol 11EQ10 Unit Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board mounted RMS Forward Current VRRM IO IF(RMS) Surge Forward Current IFSM Operating JunctionTemperature Range Tjw Storage Temperature Range Tstg Electrical • Thermal Characteristics 100 1.0 Ta=26°C* 50Hz Half Sine 1.0 Ta=57°C* Wave Resistive Load 1.57 40 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 V A A A °C °C Characteristics Symbol Conditions Min. Typ. Max. Peak Reverse Current Peak Forward Voltage Thermal Resistance (Junction to Ambient) *:Print Lands=5x5mm,Both Sides IRM VFM Rth(j-a) Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 1.0A Without Fin or P.C.Board P.C.Board mounted - - - - 0.5 - 0.85 - 140 105 Unit mA V °C/W 1 page

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PDF 11EQ10 Data sheet ( Hoja de datos )