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PDF FLC317MG-4 Data sheet ( Hoja de datos )
| Número de pieza | FLC317MG-4 | |
| Descripción | High Voltage - High Power GaAs FET | |
| Fabricantes | ETC | |
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FLC317MG-4
High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=34.8dBm(Typ.)
High Gain: G1dB=9.5dB(Typ.)
High PAE: ηadd=37%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC317MG-4 is a power GaAs FET that is designed for
general purpose application in the C-Band frequency range as it
provides superior power,gain,and efficiency.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PTot
Tstg
Tch
15
-5
15
-65 to +175
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
VDS
IGF
IGR
RG=100Ω
RG=100Ω
10
<19.4
>-2.0
Operating channel temperature Tch
145
Unit
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
Min. Typ. Max.
Saturated Drain Current
IDSS VDS=5V,VGS=0V
- 1200 1800
Transconductance
gm VDS=5V,IDS=800mA
- 600 -
Pinch-off Voltage
Vp VDS=5V,IDS=60mA
-1.0 -2.0 -3.5
Gate-Source Breakdown Voltage VGSO IGS=-60uA
-5.0 -
-
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
P1dB
G1dB
ηadd
V DS=10V
f=4.2GHz
IDS(DC)=0.6IDSS(Typ)
33.5
8.5
-
34.8
9.5
37.0
-
-
-
Thermal Resistance
Rth Channel to Case - 8.0 10.0
Unit
mA
mS
V
V
dBm
dB
%
oC/W
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
CASE STYLE: MG
Edition 1.1
May 2005
1
1 page  
FLC317MG-4
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1 ,Kanai-cho ,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
5
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| PDF Descargar | [ Datasheet FLC317MG-4.PDF ] | |
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