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Número de pieza | PF0031 | |
Descripción | MOS FET Power Amplifier Module | |
Fabricantes | Hitachi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PF0031 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! heet4U.com PF0031MOS FET Power Amplifier Module for Mobile Phone
www.DataS mApplication
.coPF0031: For NMT900 890 to 925 MHz
Features
U• High stability: Load VSWR ≈ 20:1
t4• Low power control current: 400 µA
• Thin package: 5 mm t
eePin Arrangement
h• RF-B2
ataS2
www.D www.DataSheet4U.com5 1
ADE-208-461 (Z)
1st Edition
July 1, 1996
5
4
3
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
1 page PF0031
Note for Use
• Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.
• It should not be existed any dust between module and heatsink.
• MODULE should be separated from PCB less than 1.5 mm.
• Soldering temperature and soldering time should be less than 230°C, 10 sec.
(Soldering position spaced from the root point of the lead frame: 2 mm)
• Recommendation of thermal joint compounds is TYPE G746.
(Manufacturer: Shin-Etsu Chemical, Co., Ltd.)
• To protect devices from electro-static damage, soldering iron, measuring-equipment and human body
etc. should be grounded.
• Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.
• Don't solder the flange directly.
• It should make the lead frame as straight as possible.
• The module should be screwed up before lead soldering.
• It should not be given mechanical and thermal stress to lead and flange of the module.
• When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical
characteristics should be evaluated enough.
• Don't washing the module except lead pins.
• To get good stability, ground impedance between the module GND flange and PCB GND pattern
should be designed as low as possible.
5
5 Page Pout vs. TC (1)
f = 890 MHz
VDD = 12.5 V
Pin = 2 mW
20 VAPC = 7.0 V
10
0
−40 0
40 80 120
Case Temperature TC (°C)
Pout vs. TC (2)
f = 915 MHz
VDD = 12.5 V
Pin = 2 mW
20 VAPC = 7.0 V
10
0
−40 0
40 80 120
Case Temperature TC (°C)
PF0031
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PF0031.PDF ] |
Número de pieza | Descripción | Fabricantes |
PF0030 | MOS FET Power Amplifier | Hitachi Semiconductor |
PF0031 | MOS FET Power Amplifier Module | Hitachi |
PF0032 | MOS FET Power Amplifier | Hitachi Semiconductor |
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