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PDF DS2012SF Data sheet ( Hoja de datos )
| Número de pieza | DS2012SF | |
| Descripción | Rectifier Diode | |
| Fabricantes | Dynex Semiconductor | |
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DS2012SF
DS2012SF
Rectifier Diode
Replaces September 2001 version, DS4191-4.0
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s Rectification
s Freewheel Diode
s DC Motor Control
s Power Supplies
s Welding
s Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
Conditions
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
6000
5900
5800
5700
5600
5500
Lower voltage grades available.
V = V + 100V
RSM
RRM
KEY PARAMETERS
VRRM 6000V
IF(AV) 1320A
IFSM 16500A
DS4548 -4.1 December 2001
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2012SF59
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
www.dynexsemi.com
1/7
1 page  
10000
Conditions:
Tj = 150˚C
VR = 100V
IF = 2000A
1000
Conditions:
Tj = 150˚C
VR = 100V
IF = 2000A
DS2012SF
1000
100
100
0.1
IF
QS
dIF/dt
IRM
1.0 10
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.4 Total stored charge
100
25
I2t = ^I2 x t
2
20 1.00
10
0.1 1.0 10
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.5 Maximum reverse recovery current
100
0.1
Anode side cooled
15
10
I2t
5
0.75
0 0.50
1 10 1 2 3 5 10 20 50
ms Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 175˚C)
www.dynexsemi.com
Double side cooled
0.01
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.022
0.024
0.026
0.027
Single side
0.038
0.040
0.042
0.043
0.1
Time - (s)
1.0
10
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DS2012SF.PDF ] | |
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