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Número de pieza | DS2016 | |
Descripción | 2k x 8 3V/5V Operation Static RAM | |
Fabricantes | Dallas Semiconducotr | |
Logotipo | ||
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DS2016
2k x 8 3V/5V Operation Static RAM
FEATURES
§ Low-power CMOS design
§ Standby current
− 50 nA max at tA = 25°C VCC = 3.0V
− 100 nA max at tA = 25°C VCC = 5.5V
− 1 µA max at tA = 60°C VCC = 5.5V
§ Full operation for VCC = 5.5V to 2.7V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
− DS2016 - 100 100 ns
− DS2016 - 150 150 ns
§ Reduced-speed 3V access time
− DS2016 - 100 250 ns
− DS2016 - 150 250 ns
§ Operating temperature range of -40°C to
+85°C
§ Full static operation
§ TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7 volts.
§ Available in 24-pin DIP and 24-pin SOIC
packages
§ Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24 VCC
23 A8
22 A9
21 WE
20 OE
19 A10
18 CE
17 DQ7
16 DQ6
15 DQ5
14 DQ4
13 DQ3
DS2016 24-Pin DIP (600-mil)
DS2016R 24-Pin SOIC (300-mil)
PIN DESCRIPTION
A0 - A10 - Address Inputs
DQ0 - DQ7 - Data Input/Output
CE - Chip Enable Input
WE - Write Enable Input
OE - Output Enable Input
VCC
GND
- Power Supply Input 2.7V - 5.5V
- Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.
1 of 9
092399
1 page DS2016
AC CHARACTERISTICS WRITE CYCLE
PARAMETER
(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
SYMBOL MIN TYP MAX UNITS NOTES
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
tWC
tWP
tAW
tWR
tODW
250
190
0
25
ns
ns
ns
ns
90 ns
Output Active from WE
tOEW
5
ns
Data Setup Time
Data Hold Time
tDS 100
tDH 0
ns
ns
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
Data Retention
Supply Voltage
VDR CE ≥ VCC - 0.3V
Data Retention
Current at 3.5V
ICCR1
CE ≥ VCC - 0.3V
Data Retention
Current at 2.0V
ICCR2
CE ≥ VCC - 0.3V
Chip Deselect to
Data Retention
tCDR
Recovery Time
tR
* Typical values are at 25°C
(TA = -40°C to +85°C)
MIN TYP MAX UNITS
2.0 3.5 V
50* 1000
nA
50* 750
nA
0 µs
2 ms
TIMING DIAGRAM: READ CYCLE
SEE NOTE 1
5 of 9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet DS2016.PDF ] |
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