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Número de pieza | FLM5964-8F | |
Descripción | C-Band Internally Matched FET | |
Fabricantes | Eudyna Devices | |
Logotipo | ||
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No Preview Available ! FLM5964-8F
omFEATURES
C-Band Internally Matched FET
.c• High Output Power: P1dB = 39.5dBm (Typ.)
t4U• High Gain: G1dB = 10.0dB (Typ.)
e• High PAE: ηadd = 37% (Typ.)
e• Low IM3 = -46dBc@Po = 28.5dBm
h• Broad Band: 5.9 ~ 6.4GHz
S• Impedance Matched Zin/Zout = 50Ω
ta• Hermetically Sealed Package
.DaDESCRIPTION
The FLM5964-8F is a power GaAs FET that is internally matched for
wstandard communication bands to provide optimum power and gain in a
w50 ohm system.
w mEudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
oABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
.cItem
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
UGate-Source Voltage
VGS
-5 V
t4Total Power Dissipation
PT Tc = 25°C
42.8 W
eStorage Temperature
Tstg
-65 to +175
°C
eChannel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
h1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
SELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
taItem
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
aSaturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 3400 5200
mA
Transconductance
gm VDS = 5V, IDS = 2200mA - 3400 -
mS
.DPinch-off Voltage
Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -170µA
wOutput Power at 1dB G.C.P.
P1dB
-5.0 -
38.5 39.5
-
-
V
dBm
wPower Gain at 1dB G.C.P.
mDrain Current
w .coPower-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
9.0 10.0 -
- 2200 2600
- 37 -
dB
mA
%
UGain Flatness
∆G
- - ±0.6
dB
et43rd Order Intermodulation
heDistortion
f = 6.4 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 28.5dBm S.C.L.
-44 -46
-
dBc
SThermal Resistance
Rth Channel to Case
- 3.0 3.5
°C/W
ataChannel Temperature Rise
∆Tch 10V x Idsr x Rth
- - 80
°C
www.DCASE STYLE: IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FLM5964-8F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLM5964-8F | C-Band Internally Matched FET | Eudyna Devices |
FLM5964-8F | C-Band Internally Matched FET | Fujitsu |
FLM5964-8F | C-Band Internally Matched FET | SUMITOMO |
FLM5964-8F-001 | C-Band Internally Matched FET | SUMITOMO |
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