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PDF FLM5964-45F Data sheet ( Hoja de datos )

Número de pieza FLM5964-45F
Descripción C-Band Internally Matched FET
Fabricantes Eudyna Devices 
Logotipo Eudyna Devices Logotipo



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t4U.com FLM5964-45FFEATURES
High Output Power: P1dB=47.0dBm(Typ.)
eHigh Gain: G1dB=8.5dB(Typ.)
eHigh PAE: ηadd=39%(Typ.)
hBroad Band: 5.9~6.4GHz
SImpedance Matched Zin/Zout = 50
taHermetically Sealed Package
C-Band Internally Matched FET
.DaDESCRIPTION
The FLM5964-45F is a power GaAs FET that is internally matched
ww mfor standard communication bands to provide optimum power and
gain in a 50system.
w .coABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Ite m
Drain-Source Voltage
UGate-Source Voltage
Total Pow er Dissipation
t4Storage Temperature
Channel Tem perature
Symbol
VDS
VGS
PT
Ts t g
Tch
Rating
15
-5
115
-65 to +175
175
Unit
V
V
W
oC
oC
eRECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC)
eItem
hDC Input Voltage
Forw ard Gate Current
SReverse Gate Current
Sym bol
VDS
IGF
IGR
Condition
RG=10
RG=10
Lim it
10
108
-23.2
Unit
V
mA
mA
taELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Ite m
Sym bol
Condition
aDrain Current
.DTransconductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
wOutput Pow er at 1dB G.C.P.
mPow er Gain at 1dB G.C.P.
oDrain Current
w .cPower-added Efficiency
UGain Flatness
w t43rd Order Intermodulation
eDistortion
heThermal Resistance
SChannel Tem perature Rise
IDSS
gm
Vp
VGSO
P1d B
G1d B
Id s r
ηad d
G
IM3
Rt h
Tch
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
VDS=10V
f=5.9 - 6.4 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50
f=6.4 GHz
f=10MHz, 2-tone Test
Pout=35.5dBm(S.C.L.)
Channel to Case
10V x IDS(DC) X Rth
taCASE STYLE : IK
aESD
Class III 2000V ~
.DNote : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
M in.
-
-
-0.5
-5.0
46.0
7.5
-
-
-
-37
-
-
Lim it
Typ.
24
16
-1.5
-
47.0
8.5
11
39
-
Max.
-
-
-3.0
-
-
-
13
-
1.2
Unit
A
S
V
V
dBm
dB
A
%
dB
-40 -
dBc
1.1 1.3
- 100
oC/W
oC
G.C.P.:Gain Compression Point
wwEdition 1.3
wSeptember 2004
1

1 page




FLM5964-45F pdf
FLM5964-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
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